Spin-orbit torques: Materials, mechanisms, performances, and potential applications
Current-induced spin-orbit torque (SOT) is attracting increasing interest and exciting
significant research activity. We aim to provide a comprehensive review of recent progress in …
significant research activity. We aim to provide a comprehensive review of recent progress in …
Spintronic devices: a promising alternative to CMOS devices
The field of spintronics has attracted tremendous attention recently owing to its ability to offer
a solution for the present-day problem of increased power dissipation in electronic circuits …
a solution for the present-day problem of increased power dissipation in electronic circuits …
Spin-orbit torques: Materials, physics, and devices
Spintronics, that is, the utilization of electron spin to enrich the functionality of
microelectronics, has led to the inception of numerous novel devices, particularly magnetic …
microelectronics, has led to the inception of numerous novel devices, particularly magnetic …
Nonvolatile multistates memories for high-density data storage
In the current information age, the realization of memory devices with energy efficient
design, high storage density, nonvolatility, fast access, and low cost is still a great challenge …
design, high storage density, nonvolatility, fast access, and low cost is still a great challenge …
Current‐induced spin–orbit torques for spintronic applications
Control of magnetization in magnetic nanostructures is essential for development of
spintronic devices because it governs fundamental device characteristics such as energy …
spintronic devices because it governs fundamental device characteristics such as energy …
Rashba effect in functional spintronic devices
Exploiting spin transport increases the functionality of electronic devices and enables such
devices to overcome physical limitations related to speed and power. Utilizing the Rashba …
devices to overcome physical limitations related to speed and power. Utilizing the Rashba …
Deterministic magnetization switching using lateral spin–orbit torque
Y Cao, Y Sheng, KW Edmonds, Y Ji… - Advanced …, 2020 - Wiley Online Library
Current‐induced magnetization switching by spin–orbit torque (SOT) holds considerable
promise for next generation ultralow‐power memory and logic applications. In most cases …
promise for next generation ultralow‐power memory and logic applications. In most cases …
All-electrical switching of a topological non-collinear antiferromagnet at room temperature
Y Deng, X Liu, Y Chen, Z Du, N Jiang… - National Science …, 2023 - academic.oup.com
Non-collinear antiferromagnetic Weyl semimetals, combining the advantages of a zero stray
field and ultrafast spin dynamics, as well as a large anomalous Hall effect and the chiral …
field and ultrafast spin dynamics, as well as a large anomalous Hall effect and the chiral …
Prospect of spin-orbitronic devices and their applications
Science, engineering, and medicine ultimately demand fast information processing with ultra-
low power consumption. The recently developed spin-orbit torque (SOT)-induced …
low power consumption. The recently developed spin-orbit torque (SOT)-induced …
Switching of perpendicular magnetization by spin–orbit torque
L Zhu - Advanced Materials, 2023 - Wiley Online Library
Magnetic materials with strong perpendicular magnetic anisotropy are of great interest for
the development of nonvolatile magnetic memory and computing technologies due to their …
the development of nonvolatile magnetic memory and computing technologies due to their …