Current-induced spin-orbit torque (SOT) is attracting increasing interest and exciting
significant research activity. We aim to provide a comprehensive review of recent progress in …

The field of spintronics has attracted tremendous attention recently owing to its ability to offer
a solution for the present-day problem of increased power dissipation in electronic circuits …

Spintronics, that is, the utilization of electron spin to enrich the functionality of
microelectronics, has led to the inception of numerous novel devices, particularly magnetic …

In the current information age, the realization of memory devices with energy efficient
design, high storage density, nonvolatility, fast access, and low cost is still a great challenge …

Control of magnetization in magnetic nanostructures is essential for development of
spintronic devices because it governs fundamental device characteristics such as energy …

Exploiting spin transport increases the functionality of electronic devices and enables such
devices to overcome physical limitations related to speed and power. Utilizing the Rashba …

Current‐induced magnetization switching by spin–orbit torque (SOT) holds considerable
promise for next generation ultralow‐power memory and logic applications. In most cases …

Non-collinear antiferromagnetic Weyl semimetals, combining the advantages of a zero stray
field and ultrafast spin dynamics, as well as a large anomalous Hall effect and the chiral …

Science, engineering, and medicine ultimately demand fast information processing with ultra-
low power consumption. The recently developed spin-orbit torque (SOT)-induced …

Magnetic materials with strong perpendicular magnetic anisotropy are of great interest for
the development of nonvolatile magnetic memory and computing technologies due to their …