Evaluation of Imprint and Multi‐Level Dynamics in Ferroelectric Capacitors
Fluorite‐structured ferroelectrics are one of the most promising material systems for
emerging memory technologies. However, when integrated into electronic devices, these …
emerging memory technologies. However, when integrated into electronic devices, these …
[HTML][HTML] Phase transitions in ferroelectric ZrO2 thin films
In this work, the formation of the orthorhombic phase of ZrO 2 together with the minor
monoclinic phase were elucidated by X-ray diffraction and transmission electron …
monoclinic phase were elucidated by X-ray diffraction and transmission electron …
Influence of interface on the domain polarization orientation in ferroelectric Hf0. 5Zr0· 5O2 thin films
Y Zheng, Y Xu, F Sui, Z Gao, J Chen, Z Guan, L Wei… - Ceramics …, 2024 - Elsevier
Ferroelectric HfO 2-based materials have attracted extensive attention in the research of
next-generation nonvolatile memories and logic devices due to their superior scaling …
next-generation nonvolatile memories and logic devices due to their superior scaling …
On the relationship between imprint and reliability in Hf0. 5Zr0. 5O2 based ferroelectric random access memory
P Yuan, Y Chen, L Chai, Z Jiao, Q Luan… - Journal of …, 2024 - iopscience.iop.org
The detrimental effect of imprint, which can cause misreading problem, has hindered the
application of ferroelectric HfO 2. In this work, we present results of a comprehensive …
application of ferroelectric HfO 2. In this work, we present results of a comprehensive …
Oxygen vacancy effects on polarization switching of ferroelectric thin films
X Henning, K Alhada-Lahbabi, D Deleruyelle… - Physical Review …, 2024 - APS
The controlled switching of spontaneous polarization in ferroelectrics by applying an
external electric field is essential for many device operations. Oxygen vacancy defects …
external electric field is essential for many device operations. Oxygen vacancy defects …
[HTML][HTML] Low oxidation conditions in pulsed laser deposition enhance polarization without degradation of endurance and retention in Hf0. 5Zr0. 5O2 films
Interplay between oxygen vacancies and the stabilization of the ferroelectric orthorhombic
phase in doped HfO 2, as well as the resulting impact on endurance and retention, is far …
phase in doped HfO 2, as well as the resulting impact on endurance and retention, is far …
Improvement of ferroelectric phase fraction in HfO2 via La-containing co-doping method
Y Tian, Y Zhou, M Zhao, Y Ouyang, X Tao - Applied Physics Letters, 2024 - pubs.aip.org
In this work, the effect of co-doping lanthanide and VB group elements on the phase fraction
of HfO 2 is studied by first-principles calculations. A significant increase in the ferroelectric …
of HfO 2 is studied by first-principles calculations. A significant increase in the ferroelectric …