Gaussian approximation potential for amorphous Si: H
Hydrogenation of amorphous silicon (a-Si: H) is critical for reducing defect densities,
passivating midgap states and surfaces, and improving photoconductivity in silicon-based …
passivating midgap states and surfaces, and improving photoconductivity in silicon-based …
Structural changes of silicon upon high-energy milling investigated by Raman spectroscopy
P Unifantowicz, S Vaucher… - Journal of Physics …, 2007 - iopscience.iop.org
This study showed pronounced changes in the Raman scattering of silicon powder during
high-energy ball milling. The powders were milled for 1–18 h in a steel ball mill in argon …
high-energy ball milling. The powders were milled for 1–18 h in a steel ball mill in argon …
Physical models for amorphous-silicon thin-film transistors and their implementation in a circuit simulation program
M Hack, MS Shur, JG Shaw - IEEE transactions on electron …, 1989 - ieeexplore.ieee.org
A semianalytic theory to describe both the current-voltage and capacitance-voltage
characteristics of amorphous silicon thin-film transistors on the basis of their physics of …
characteristics of amorphous silicon thin-film transistors on the basis of their physics of …
Simulations of short‐channel and overlap effects in amorphous silicon thin‐film transistors
JG Shaw, M Hack - Journal of applied physics, 1989 - pubs.aip.org
Through the use of two‐dimensional computer simulations, we study short‐channel and
overlap effects in amorphous silicon thin‐film transistors. As large‐area fabrication …
overlap effects in amorphous silicon thin‐film transistors. As large‐area fabrication …
Linear and nonlinear properties study of silicon nitride films for integrated photonics
AL Aguayo-Alvarado, FA Araiza-Sixtos… - Journal of Non …, 2023 - Elsevier
Silicon nitride has been used in the silicon photonics industry as an adequate alternative for
manufacturing waveguides with good behavior for integrated nonlinear optics applications …
manufacturing waveguides with good behavior for integrated nonlinear optics applications …
Temperature-induced nanostructural evolution of hydrogen-rich voids in amorphous silicon: a first-principles study
P Biswas, D Paudel, R Atta-Fynn, SR Elliott - Nanoscale, 2020 - pubs.rsc.org
The paper presents an ab initio study of temperature-induced nanostructural evolution of
hydrogen-rich voids in amorphous silicon. By using large a-Si models, obtained from …
hydrogen-rich voids in amorphous silicon. By using large a-Si models, obtained from …
Numerical simulations of amorphous silicon thin‐film transistors
M Hack, J Shaw - Journal of applied physics, 1990 - pubs.aip.org
In this paper we present results of two-dimensional numerical simulations of low voltage,
high Yoltage, and vertical amorphous silicon transistors, The model input consists of one …
high Yoltage, and vertical amorphous silicon transistors, The model input consists of one …
Large-area a-Si: H TFT arrays for printing, input scanning and electronic copying applications
TC Chuang, LE Fennell, WB Jackson, J Levine… - Journal of Non …, 1987 - Elsevier
LARGE-AREA a-Si:H TFT ARRAYS FOR PRINTING, INPUT SCANNING AND
ELECTRONIC COPYING APPLICATIONS TC CHUANG, LE FENNELL, WB JA Page 1 …
ELECTRONIC COPYING APPLICATIONS TC CHUANG, LE FENNELL, WB JA Page 1 …
以準分子雷射退火製作控制晶界位置之多閘極複晶矽薄膜電晶體之研究
李序恆， 鄭晃忠 - 2007 - ir.lib.nycu.edu.tw
近年來, 低溫複晶矽薄膜電晶體成為顯示技術應用中的關鍵元件, 由於其高載子遷移率的特性
可以應用在系統面板(System on Panel, SOP) 上. 雖然透過傳統準分子電射退火方式可轉化非晶 …
可以應用在系統面板(System on Panel, SOP) 上. 雖然透過傳統準分子電射退火方式可轉化非晶 …
低溫複晶矽薄膜電晶體元件均勻性及類比緩衝電路設計之研究
魏瑛君， 鄭晃忠 - 2005 - ir.lib.nycu.edu.tw
在本篇論文中, 我們以低溫複晶矽薄膜電晶體為基礎, 從元件結構以及類比緩衝電路設計兩方面
來探討元件均勻性之問題. 在此研究中, 我們將藉由簡單地調整元件結構來提升低溫複晶矽薄膜 …
來探討元件均勻性之問題. 在此研究中, 我們將藉由簡單地調整元件結構來提升低溫複晶矽薄膜 …