The self-organization of dynamical structures in complex natural systems is associated with
an intrinsic capacity for computation. Beginning from the context of modern trends in …

Based on projections of the International Roadmap for Semiconductors (ITRS), the
continued scaling of complementary metal–oxide semiconductor (CMOS) devices will face …

Nanoelectronics, as a true successor of microelectronics, is certainly a major technology
boomer in the 21st century. This has been shown by its several applications and also by its …

Nanocrystalline silicon (nc-Si) thin-film transistors (TFTs) fabricated at a maximum
processing temperature of 250° C operate with high field-effect mobility compared with …

This work presents a novel architecture, which is both device and circuit independent. The
starting idea is that computations can be performed in three fundamentally different ways …

Supramolecular chemistry on water – towards self-assembling molecular electronic circuitry -
Chemical Communications (RSC Publishing) DOI:10.1039/B417526N Royal Society of …

In this letter, we have found a more general formulation of the REward Increment=
Nonnegative Factor times Offset Reinforcement times Characteristic Eligibility (REINFORCE) …

This is a preliminary analysis of prospects and options for the development of hybrid
CMOS/nanoelectronic integrated circuits, in particular those of the" CMOL" variety. We …

Resistive switching (RS) phenomena have been vigorously investigated in a large variety of
materials and highlighted for its preeminent potential for the future nonvolatile …

Electrical characteristics of nano-crystalline silicon (nc-Si) thin-film transistors (TFTs) are fit
using SPICE device models. The corresponding device model geometry is then extrapolated …