A review on transport characteristics and Bio-sensingapplication of Silicene

S Ghosal, A Bandyopadhyay… - Reports on Progress …, 2023 - iopscience.iop.org
Silicene, a silicon counterpart of graphene, has been predicted to possess massless Dirac
fermions. Compared to graphene, the effective spin-orbit interaction is quite significant …

A tutorial on the NEGF method for electron transport in devices and defective materials

A Thakur, N Sarkar - The European Physical Journal B, 2023 - Springer
A tutorial on non-equilibrium Green's function theory and its applications on nanoscale
devices is presented. A stepwise tutorial presentation, starting from the concept of Green's …

[HTML][HTML] Impact of phonon scattering mechanisms on the performance of silicene nanoribbon field-effect transistors

MW Chuan, MA Riyadi, A Hamzah, NE Alias… - Results in Physics, 2021 - Elsevier
Rigorous efforts are invested globally in the semiconductor industry to leverage next-
generation nanoelectronics beyond Moore's law. Among them, silicene is foreseen as a …

Device Performance of Double‐Gate Schottky‐Barrier Graphene Nanoribbon Field‐Effect Transistors with Physical Scaling

MW Chuan, MAI Misnon, NE Alias… - Journal of …, 2023 - Wiley Online Library
Moore's law is approaching its limit due to various challenges, especially the size limit of the
transistors. The International Roadmap for Devices and Systems (IRDS), the successor of …

Electronic properties of graphene nanoribbons with Stone-Wales defects using the tight-binding method

MW Chuan, SZ Lok, A Hamzah, NE Alias… - Advances in nano …, 2023 - koreascience.kr
Driven by the scaling down of transistor node technology, graphene became of interest to
many researchers following the success of its fabrication as graphene nanoribbons (GNRs) …

An investigation of the role of line defects on the transport properties of armchair graphene nanoribbons

A Gupta, N Sarkar - Applied Physics A, 2022 - Springer
Graphene nanoribbons (GNRs) are narrow strips of graphene which show interesting
electronic properties. The occurrence of defects (vacancy, line, impurity) in GNR can alter …

Device modelling and performance analysis of two-dimensional AlSi3 ballistic nanotransistor

MW Chuan, KL Wong, A Hamzah, S Rusli… - Advances in nano …, 2021 - koreascience.kr
Silicene is an emerging two-dimensional (2D) semiconductor material which has been
envisaged to be compatible with conventional silicon technology. This paper presents a …

Two-dimensional modelling of uniformly doped silicene with aluminium and its electronic properties

MW Chuan, KL Wong, A Hamzah, S Rusli… - Advances in nano …, 2020 - koreascience.kr
Silicene is a two-dimensional (2D) derivative of silicon (Si) arranged in honeycomb lattice. It
is predicted to be compatible with the present fabrication technology. However, its gapless …

Effect of Line Defects on the Band Structures, Local Density of States, and the Landau Levels for Armchair Graphene Nanoribbons in the Quantum Hall Effect Regime

A Gupta, N Sarkar - Journal of Electronic Materials, 2024 - Springer
The effects of one and two line defects are investigated with respect to the band structures
and local density of states (LDOS) in armchair graphene nanoribbons (AGNRs) under the …

Investigation of the role of defects on channel density profiles and their effect on the output characteristics of a nanowire FET

KS Cariappa, N Sarkar - Engineering Research Express, 2021 - iopscience.iop.org
This work investigates the effect of defects on the electron density profiles of nanowire FETs
with a rectangular cross-section. It also presents a framework for the discretization of the …