Telecom-band quantum dot technologies for long-distance quantum networks

Y Yu, S Liu, CM Lee, P Michler, S Reitzenstein… - Nature …, 2023 - nature.com
A future quantum internet is expected to generate, distribute, store and process quantum bits
(qubits) over the world by linking different quantum nodes via quantum states of light. To …

[HTML][HTML] GaAs quantum dots grown by droplet etching epitaxy as quantum light sources

SFC da Silva, G Undeutsch, B Lehner, S Manna… - Applied Physics …, 2021 - pubs.aip.org
This Perspective presents an overview on the epitaxial growth and optical properties of
GaAs quantum dots obtained with the droplet etching method as high-quality sources of …

Strain‐Free GaSb Quantum Dots as Single‐Photon Sources in the Telecom S‐Band

J Michl, G Peniakov, A Pfenning… - Advanced Quantum …, 2023 - Wiley Online Library
Generating single photons in the telecommunication wavelength range from semiconductor
quantum dots (QDs) and interfacing them with spins of electrons or holes is of high interest …

Unveiling the electronic structure of GaSb/AlGaSb quantum dots emitting in the third telecom window

L Leguay, A Chellu, J Hilska, E Luna… - Materials for …, 2024 - iopscience.iop.org
Epitaxially-grown semiconductor quantum dots (QDs) provide an attractive platform for the
development of deterministic sources of high-quality quantum states of light. Such non …

Theory of polarized photoluminescence of indirect band gap excitons in type-I quantum dots

DS Smirnov, EL Ivchenko - Physical Review B, 2023 - APS
In this paper, we theoretically investigate the optical orientation and alignment of excitons in
quantum dots with weak electron-hole exchange interaction and long exciton radiative …

[HTML][HTML] Local droplet etching on InAlAs/InP surfaces with InAl droplets

X Cao, Y Zhang, C Ma, Y Wang, B Brechtken, RJ Haug… - AIP Advances, 2022 - pubs.aip.org
GaAs quantum dots (QDs) grown by local droplet etching (LDE) have been studied
extensively in recent years. The LDE method allows for high crystallinity, as well as precise …

Assessing thermodynamical properties of Al1− xGaxSb alloys and optical modes for Al1− xGaxSb/GaAs epifilms and (AlSb) m/(GaSb) n superlattices

DN Talwar, HH Lin - Journal of Vacuum Science & Technology A, 2022 - pubs.aip.org
A generalized Green's function (GF) theory is adopted in the framework of a realistic rigid-ion-
model (RIM) to assess the composition, x-dependent lattice dynamics, and thermodynamical …

Telecom wavelength single-photon source based on InGaSb/AlGaSb quantum dot technology

T Hakkarainen, J Hilska, A Hietalahti, S Ranta… - arXiv preprint arXiv …, 2024 - arxiv.org
Deterministic light sources capable of generating quantum states on-demand at
wavelengths compatible with fiber optics and atmospheric transmission are essential for …

Impact of interfacial thickness on Raman intensity profiles and phonon anisotropy in short-period (AlSb) n/(GaSb) m superlattices

DN Talwar - Journal of Vacuum Science & Technology A, 2022 - pubs.aip.org
Comprehensive simulations of phonon dispersions ωj (~ qSL) and atomic displacements are
reported for short-period (AlSb) n/(GaSb) m superlattices (SLs) using a modified linear-chain …

Electronic structure of GaSb/AlGaSb quantum dots formed by filling droplet-etched nanoholes

L Leguay, A Chellu, J Hilska… - … and Simulation of …, 2024 - spiedigitallibrary.org
This research focuses on strain-free GaSb/AlGaSb quantum dots (QDs) grown via local
droplet etching (LDE) for their potential in quantum photonic applications. These QDs exhibit …