Ultra-wide bandgap materials show great promise as a solution to some of the limitations of
current state of the art semiconductor technology. Among these, diamond has exhibited …

Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power
electronics with capabilities beyond existing technologies due to its large bandgap …

Field-effect transistors made of wide-bandgap semiconductors can operate at high voltages,
temperatures and frequencies with low energy losses, and are important for power and high …

Respiration signals reflect many underlying health conditions, including cardiopulmonary
functions, autonomic disorders and respiratory distress, therefore continuous measurement …

Diamond is a wide bandgap semiconductor that can work at high temperatures and resist
very high electric fields. It endures harsh environments through its physical stability and …

Recent developments in the use of diamond materials as metal-oxide-semiconductor field-
effect transistors (MOSFETs) are introduced in this article, including an analysis of the …

An enhancement-mode hydrogen-terminated diamond field-effect transistor (FET) is realized
by using a low work function gate material, namely, lanthanum hexaboride (LaB 6). The …

For the first time, C-doped gC 3 N 4@ C, N co-doped TiO 2 core-shell heterojunction
photocatalyst was successfully prepared by an in-situ one-pot hydrothermal bio-template …

During selective epitaxial growth of diamond through SiO 2 masks, silicon terminations were
formed on a diamond surface by replacing oxygen terminations under the masks. The high …

The normally-off Yttrium (Y) gate hydrogen-terminated (H-terminated) diamond field effect
transistor (FET) with 5 nm Al 2 O 3 dielectric layer has been successfully fabricated and …