US7796969B2 - Symmetrically and asymmetrically stacked transistor group RF switch -
Google Patents US7796969B2 - Symmetrically and asymmetrically stacked transistor group …

US8129787B2 - Method and apparatus for use in improving linearity of MOSFETs using an
accumulated charge sink - Google Patents US8129787B2 - Method and apparatus for use in …

(57) ABSTRACT A monolithic integrated circuit (IC), and method of manufac turing same,
that includes all RF front end or transceiver elements for a portable communication device …

A method and apparatus for use in improving linearity sensitivity of MOSFET devices having
an accumulated charge sink (ACS) are disclosed. The method and apparatus are adapted to …

(57) ABSTRACT A novel RF buiTer circuit adapted for use With an RF sWitch circuit and
method for switching RF signals is described. The RF sWitch circuit is fabricated in a silicon …

US PATENT DOCUMENTS 3,470,443 A 9/1969 Berry et al. 3,646,361 A 2, 1972 Pfiffner
3,699,359 A 10/1972 Shelby 3,731,112 A 5, 1973 Smith 3,878.450 A 4, 1975 Greatbatch …

A monolithic integrated circuit (IC), and method of manufacturing same, that includes all RF
front end or transceiver elements for a portable communication device, including a power …

A circuit and method for controlling charge injection in a circuit are disclosed. In one
embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) …

3,731, 112 3,878,450 3,942,047 3,943,428 3,955,353 3,975,671 3,988,727 4,047,091
4,053,916 4,061,929 4,068,295 4,079,336 4,106,086 4,139,826 4,145,719 4,186,436 …

An RF switch circuit and method for switching RF signals that may be fabricated using
common integrated circuit materials such as silicon, particularly using insulating substrate …