Due to the excellent material characteristics, AlGaN/GaN HEMTs are widely used in high
power and high frequency applications. However, the existence of damages, defects and …

Abstract AlGaN/GaN High Electron Mobility Transistor (HEMT) frequently employs field plate
techniques to improve the device's reliability and optimum performance. This literature …

In this letter, we introduce and demonstrate the concept of slanted tri-gates to enhance the
breakdown voltage (V BR) in lateral GaN power devices. Conventionally, field plates (FPs) …

A deeply-scaled GaN-on-Si high electron mobility transistor with a record-high cut-off
frequency (f T) of 310áGHz has been demonstrated. The device has an InAlN/GaN …

GaN-on-Si high electron mobility transistors (HEMTs) with 80ánm gate length fabricated
using Si CMOS-compatible Ta/Al ohmic and Ti/Al gate contacts are reported in this work …

The GaN HEMT is a potential candidate for RF applications due to the high frequency and
large power handling capability. To ensure the quality of the communication signal, linearity …

In this paper, we report a promising approach for the gate recess process with a suppressed
current collapse in GaN-based high electron mobility transistors (HEMTs) by means of …

This paper investigates the current collapse and transient response of a drain current (I d)
following the transition to an off-state in GaN high-electron-mobility transistors (HEMTs) on …

In this article, we report a suppression of leakage current and an improvement of isolation
breakdown voltage on GaN‐based high electron mobility transistors (HEMTs) by means of …

This paper presents the fabrication procedure of TiO2 passivated field plate Schottky diode
and gives a comparison of Ni/Au/n-GaN Schottky barrier diodes without field plate and with …