A multi-time-gated SPAD array with integrated coarse TDCs
Time-gating of single-photon avalanche diodes (SPADs) was commonly used as a method
to reduce dark noise in biomedical imaging applications where photon events are correlated …
to reduce dark noise in biomedical imaging applications where photon events are correlated …
Compact modeling and contact effects in thin film transistors
JAJ Tejada, JAL Villanueva, PL Varo… - … on Electron Devices, 2014 - ieeexplore.ieee.org
A compact model for the current-voltage characteristics of organic thin-film transistors
(OTFTs), which includes the effects of the contact regions, is proposed. Different physical …
(OTFTs), which includes the effects of the contact regions, is proposed. Different physical …
On-chip colloidal quantum dot devices with a CMOS compatible architecture for near-infrared light sensing
Solution-processed semiconductors that exhibit tunable light absorption and can be directly
integrated into state-of-the-art silicon technologies are attractive for near-infrared (NIR) light …
integrated into state-of-the-art silicon technologies are attractive for near-infrared (NIR) light …
Differential quench and reset circuit for single-photon avalanche diodes
A differential quench and reset (QR) configuration for single-photon avalanche diodes
(SPADs) is proposed and investigated in this work. Compared to the traditional single QR …
(SPADs) is proposed and investigated in this work. Compared to the traditional single QR …
Junction-less optical phase shifter loaded silicon Mach–Zehnder modulator
In this paper, we design and numerically analyze the performance of electrostatic doping
(ED) assisted junction-less optical phase shifter loaded silicon Mach–Zehnder (MZM), which …
(ED) assisted junction-less optical phase shifter loaded silicon Mach–Zehnder (MZM), which …
Theoretical investigation of tensile strained GeSn waveguide with Si3N4 liner stressor for mid-infrared detector and modulator applications
We theoretically investigate a tensile strained GeSn waveguide integrated with Si_3N_4
liner stressor for the applications in mid-infrared (MIR) detector and modulator. A substantial …
liner stressor for the applications in mid-infrared (MIR) detector and modulator. A substantial …
Theoretical Analysis of GeSn Quantum Dots for Photodetection Applications
GeSn alloys have recently emerged as complementary metal–oxide–semiconductor
(CMOS)-compatible materials for optoelectronic applications. Although various photonic …
(CMOS)-compatible materials for optoelectronic applications. Although various photonic …
One-pot facile synthesis of a concentrated Si nanoparticle solution
H Sun, S Miyazaki, H Tamamitsu… - Chemical …, 2013 - pubs.rsc.org
A silicon nanoparticle solution (size≅ 50 nm) with the concentration of 100 mM, which is
contamination free, was synthesized using a ball milling method and was stable for 4 …
contamination free, was synthesized using a ball milling method and was stable for 4 …
Noise analysis of group IV material-based heterojunction phototransistor for fiber-optic telecommunication networks
This paper presents an analytical study of the noise behavior and spectral responsivity of Ge
1-x Sn x alloy-based heterojunction phototransistors (HPTs) for different Sn compositions …
1-x Sn x alloy-based heterojunction phototransistors (HPTs) for different Sn compositions …
Impact of silicide layer on single photon avalanche diodes in a 130 nm CMOS process
Z Cheng, D Palubiak, X Zheng… - Journal of Physics D …, 2016 - iopscience.iop.org
Single photon avalanche diode (SPAD) is an attractive solid-state optical detector that offers
ultra-high photon sensitivity (down to the single photon level), high speed (sub-nanosecond …
ultra-high photon sensitivity (down to the single photon level), high speed (sub-nanosecond …