Morphological evolution during epitaxial thin film growth: Formation of 2D islands and 3D mounds
Homoepitaxy provides an ideal testing ground for fundamental concepts in film growth. The
rich variety of complex far-from-equilibrium morphologies which can form during deposition …
rich variety of complex far-from-equilibrium morphologies which can form during deposition …
Poly (vinyl alcohol) thin film filled with CdSe–ZnS quantum dots: Fabrication, characterization and optical properties
A transparent poly (vinyl alcohol)(PVA) nanocomposite thin film (30–50nm) reinforced with
core/shell cadmium selenide (CdSe)/zinc sulfide (ZnS) quantum dots (QDs) was fabricated …
core/shell cadmium selenide (CdSe)/zinc sulfide (ZnS) quantum dots (QDs) was fabricated …
Sputtering: the material erosion tool
MVR Murty - Surface Science, 2002 - Elsevier
The erosion of materials with energetic ions is an indispensable tool in the laboratory and
the industry. The ion–solid collision process leading to the ejection of atoms contains …
the industry. The ion–solid collision process leading to the ejection of atoms contains …
Growth-rate dependence of the structural transition of bismuth islands on Si (111) substrates
R Ushioda, M Shimura, K Nakatsuji, H Hirayama - Physical Review Materials, 2022 - APS
During the growth of ultrathin Bi films, Bi (110) islands with a black phosphorus (BP)-like
structure nucleate initially. These Bi (110) islands reorganize to Bi (111) islands with a …
structure nucleate initially. These Bi (110) islands reorganize to Bi (111) islands with a …
Temperature dependent morphological evolution of Pt (1 1 1) by ion erosion: Destabilization, phase coexistence and coarsening
M Kalff, G Comsa, T Michely - Surface science, 2001 - Elsevier
A scanning tunneling microscopy investigation of the morphological evolution of Pt (111)
upon removal of 0.2 to 680 atomic layers by 1 keV Xe+ ion bombardment at normal …
upon removal of 0.2 to 680 atomic layers by 1 keV Xe+ ion bombardment at normal …
Development and ordering of mounds during metal (100) homoepitaxy
KJ Caspersen, AR Layson, CR Stoldt, V Fournée… - Physical Review B, 2002 - APS
Scanning-tunneling microscopy studies combined with atomistic modeling for Ag/Ag (100)
homoepitaxy reveal complex growth behavior at 300 K: initial smooth growth up to∼ 25 ML …
homoepitaxy reveal complex growth behavior at 300 K: initial smooth growth up to∼ 25 ML …
Crystal symmetry, step-edge diffusion, and unstable growth
We study the effect of crystal symmetry and step-edge diffusion on the surface current
governing the evolution of a growing crystal surface. We find there are two possible …
governing the evolution of a growing crystal surface. We find there are two possible …
Comparison of morphology evolution of Ge (001) homoepitaxial films grown by pulsed laser deposition and molecular-beam epitaxy
Using a dual molecular-beam epitaxy (MBE)–pulsed laser deposition (PLD) ultrahigh
vacuum chamber, we have conducted the first experiments under identical thermal …
vacuum chamber, we have conducted the first experiments under identical thermal …
Step edge diffusion and step atom detachment in surface evolution: Ion erosion of Pt (111)
T Michely, M Kalff, G Comsa, M Strobel, KH Heinig - Physical Review Letters, 2001 - APS
The temperature dependent morphological evolution of Pt (111) under 1 keV Xe+ normal
incidence ion bombardment has been investigated up to 600 monolayers removed …
incidence ion bombardment has been investigated up to 600 monolayers removed …