Zn1–x Sn x O y (ZTO) deposited by atomic layer deposition has shown promising results as
a buffer layer material for kesterite Cu2ZnSnS4 (CZTS) thin film solar cells. Increased …

P-type solid solutions of indium (In) in kesterite Cu 2 ZnSn (S, Se) 4 films (CZTSSe (In)) with
In contents of 0–19.34 at% were prepared by In alloying with the kesterite Cu 2 ZnSn (S, Se) …

In this research, we report the synthesis of Cu 2 Zn (SnGe) Se 4 compound by sequential
thermal evaporation technique as well as the influence of the germanium content on the …

Nowadays there is a wide range of alternative materials to silicon that are used for the
processing of photovoltaic (PV) devices, including Perovskites, GaAs, CdTe, Cu (In, Ga)(S …

A multilayered p-type photoabsorber based on kesterite Cu2ZnSnSe4 has been
functionalized with inexpensive and easily scalable amorphous MoS2 electrocatalyst by …

Abstract Cu 2 ZnSnSe 4 (CZTSe) thin films were synthesized by a cosputtering–annealing
process and characterized as absorber layer of solar cells. Electrical characteristics of the …

Among the emerging thin-film photovoltaic (PV) materials formed by earth-abundant and
nontoxic elements, the so-called kesterite (Cu 2 ZnSn (S, Se) 4—CZTSSe; Cu 2 ZnSnS 4 …

Cu 2 ZnSnS 4 as the promising absorber layer material, has received great attention in the
application of highly efficient and low-cost thin film solar cells. The theoretical photovoltaic …

Recent study shows that the main reason for limiting CZTS device performance lies in the
low open circuit voltage, and crucial factor that could affect the V oc is secondary phases like …

This work explores the thermal stability of antimony‐based photovoltaic (PV) technologies
investigating the effect of low‐temperature (50—350° C) postdeposition annealings (PDAs) …