Multidimensional device architectures for efficient power electronics
Power semiconductor devices are key to delivering high-efficiency energy conversion in
power electronics systems, which is critical in efforts to reduce energy loss, cut carbon …
power electronics systems, which is critical in efforts to reduce energy loss, cut carbon …
Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors
J Yang, K Liu, X Chen, D Shen - Progress in Quantum Electronics, 2022 - Elsevier
Owing to their novel physical properties, semiconductors have penetrated almost every
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …
[HTML][HTML] Ultra-wide bandgap semiconductor Ga2O3 power diodes
J Zhang, P Dong, K Dang, Y Zhang, Q Yan… - Nature …, 2022 - nature.com
Ultra-wide bandgap semiconductor Ga2O3 based electronic devices are expected to
perform beyond wide bandgap counterparts GaN and SiC. However, the reported power …
perform beyond wide bandgap counterparts GaN and SiC. However, the reported power …
[HTML][HTML] An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics
Avalanche and surge robustness involve fundamental carrier dynamics under high electric
field and current density. They are also prerequisites of any power device to survive …
field and current density. They are also prerequisites of any power device to survive …
[HTML][HTML] GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
Enhanced hydrogen generation via overall water splitting using novel MoS2-BN nanoflowers assembled TiO2 ternary heterostructures
Envisaging headway in the applicability of sustainable H 2 energy, the novel report of the
fabrication of MoS 2-BN/TiO 2 (MBT) heterogeneous nanostructures has been proposed via …
fabrication of MoS 2-BN/TiO 2 (MBT) heterogeneous nanostructures has been proposed via …
[HTML][HTML] Recent progress on the electronic structure, defect, and doping properties of Ga2O3
ABSTRACT Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …
[HTML][HTML] Growth of bulk β-Ga2O3 single crystals by the Czochralski method
Z Galazka - Journal of Applied Physics, 2022 - pubs.aip.org
The present Tutorial provides a description of the growth of bulk β-Ga 2 O 3 single crystals
by the Czochralski method with a focus on the critical growth aspects. In particular, it details …
by the Czochralski method with a focus on the critical growth aspects. In particular, it details …
Highly sensitive solar-blind deep ultraviolet photodetector based on graphene/PtSe2/β-Ga2O3 2D/3D Schottky junction with ultrafast speed
There is an emerging need for high-sensitivity solar-blind deep ultraviolet (DUV)
photodetectors with an ultra-fast response speed. Although nanoscale devices based on Ga …
photodetectors with an ultra-fast response speed. Although nanoscale devices based on Ga …
[HTML][HTML] β-Ga2O3 material properties, growth technologies, and devices: a review
M Higashiwaki - AAPPS Bulletin, 2022 - Springer
Rapid progress in β-gallium oxide (β-Ga 2 O 3) material and device technologies has been
made in this decade, and its superior material properties based on the very large bandgap …
made in this decade, and its superior material properties based on the very large bandgap …