Recent progress in voltage control of magnetism: Materials, mechanisms, and performance

C Song, B Cui, F Li, X Zhou, F Pan - Progress in Materials Science, 2017 - Elsevier
Voltage control of magnetism (VCM) is attracting increasing interest and exciting significant
research activity driven by its profound physics and enormous potential for application. This …

[HTML][HTML] Consequences of the Dzyaloshinskii-Moriya interaction

RE Camley, KL Livesey - Surface Science Reports, 2023 - Elsevier
Recently there has been an explosion of research related to the Dzyaloshinskii-Moriya
interaction (DMI) in magnetic and multiferroic materials. This article reviews the key themes …

Large-voltage tuning of Dzyaloshinskii–Moriya interactions: A route toward dynamic control of skyrmion chirality

T Srivastava, M Schott, R Juge, V Krizakova… - Nano …, 2018 - ACS Publications
Electric control of magnetism is a prerequisite for efficient and low-power spintronic devices.
More specifically, in heavy metal–ferromagnet–insulator heterostructures, voltage gating has …

[HTML][HTML] Electric-field control of anomalous and topological Hall effects in oxide bilayer thin films

Y Ohuchi, J Matsuno, N Ogawa, Y Kozuka… - Nature …, 2018 - nature.com
One of the key goals in spintronics is to tame the spin-orbit coupling (SOC) that links spin
and motion of electrons, giving rise to intriguing magneto-transport properties in itinerant …

[HTML][HTML] Controlling Dzyaloshinskii-Moriya interaction via chirality dependent atomic-layer stacking, insulator capping and electric field

H Yang, O Boulle, V Cros, A Fert, M Chshiev - Scientific reports, 2018 - nature.com
Using first-principles calculations, we demonstrate several approaches to control
Dzyaloshinskii-Moriya Interaction (DMI) in ultrathin films with perpendicular magnetic …

Spin-wave diode

J Lan, W Yu, R Wu, J Xiao - Physical Review X, 2015 - APS
A diode, a device allowing unidirectional signal transmission, is a fundamental element of
logic structures, and it lies at the heart of modern information systems. The spin wave or …

[HTML][HTML] Recent progress in the voltage-controlled magnetic anisotropy effect and the challenges faced in developing voltage-torque MRAM

T Nozaki, T Yamamoto, S Miwa, M Tsujikawa, M Shirai… - Micromachines, 2019 - mdpi.com
The electron spin degree of freedom can provide the functionality of “nonvolatility” in
electronic devices. For example, magnetoresistive random access memory (MRAM) is …

[HTML][HTML] Gate-controlled skyrmion and domain wall chirality

CE Fillion, J Fischer, R Kumar, A Fassatoui… - Nature …, 2022 - nature.com
Magnetic skyrmions are localized chiral spin textures, which offer great promise to store and
process information at the nanoscale. In the presence of asymmetric exchange interactions …

[HTML][HTML] Highly efficient voltage control of spin and enhanced interfacial perpendicular magnetic anisotropy in iridium-doped Fe/MgO magnetic tunnel junctions

T Nozaki, A Kozioł-Rachwał, M Tsujikawa, Y Shiota… - NPG Asia …, 2017 - nature.com
Voltage control of spin enables both a zero standby power and ultralow active power
consumption in spintronic devices, such as magnetoresistive random-access memory …

Dzyaloshinskii-Moriya interaction as a consequence of a Doppler shift due to spin-orbit-induced intrinsic spin current

T Kikuchi, T Koretsune, R Arita, G Tatara - Physical Review Letters, 2016 - APS
We present a physical picture for the emergence of the Dzyaloshinskii-Moriya (DM)
interaction based on the idea of the Doppler shift by an intrinsic spin current induced by spin …