Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …

In this article, we review the recent progress of ferroelectric field-effect transistors (FeFETs)
based on ferroelectric hafnium oxide (HfO 2), ten years after the first report on such a device …

Discovery of robust yet reversibly switchable electric dipoles at reduced dimensions is
critical to the advancement of nanoelectronics devices. Energy bands flat in momentum …

Over the last few decades, the research on ferroelectric memories has been limited due to
their dimensional scalability and incompatibility with complementary metal‐oxide …

The ferroelectricity in fluorite-structure oxides such as hafnia and zirconia has attracted
increasing interest since 2011. They have various advantages such as Si-based …

Nonvolatile memories are in strong demand due to the desire for miniaturization, high-speed
storage, and low energy consumption to fulfill the rapid developments of big data, the …

Atomic-scale ferroelectrics are of great interest for high-density electronics, particularly field-
effect transistors, low-power logic, and nonvolatile memories. We devised a film with a …

At the end of a rush lasting over half a century, in which CMOS technology has been
experiencing a constant and breathtaking increase of device speed and density, Moore's …

Although 10 years have passed since the initial report of ferroelectricity in hafnia (HfO 2),
researchers are still intensely fascinated by this material system and the promise it holds for …

To address the demands of emerging data‐centric computing applications, ferroelectric field‐
effect transistors (Fe‐FETs) are considered the forefront of semiconductor electronics owing …