Over the last few decennia, power DC/DC converters have been the subject of great interest
due to its extensive increment of utilization in different applications. A thorough review on …

Switching devices based on wide bandgap materials such as silicon carbide (SiC) offer a
significant performance improvement on the switch level (specific on resistance, etc.) …

Power switching devices based on wide bandgap semiconductor materials, such as silicon
carbide (SiC) and gallium nitride (GaN) offer superior performance such as low switching …

The lateral GaN power semiconductor technology enables monolithic integration of
complete power converter topologies such as half-bridges, multi-phase and multi-level …

This paper presents a specific architecture for a low-side/high-side gate driver
implementation for power devices running at high switching frequencies and under very …

This paper presents an analysis of losses that occur during dead time in an active-clamp
flyback converter utilizing Gallium Nitride based MOSFETs. This analysis is used to optimize …

This paper presents a study on the gate driver circuitries that need to be implemented to
drive several power devices when associated in series connection. More specifically, the …

Gallium Nitride HFET (Hetero-junction Field Effect Transistors) power switches are poised to
replace silicon MOSFETs and IGBTs in many high-performance power switching …

The emerging Gallium-Nitride (GaN) based power transistors offers the potential to achieve
higher efficiency and higher switching frequencies than possible with Silicon MOSFET's …

Derived from the class-E resonant converters, the isolated class-Φ 2 resonant converters
have much reduced voltage stress of the control FET owing to a shunt branch paralleled with …