Flexible ferroelectric devices: status and applications
X Jia, R Guo, BK Tay, X Yan - Advanced Functional Materials, 2022 - Wiley Online Library
Flexible electronic devices have been extensively studied for their advantages of
distinguished portability, conformal contact characteristics, and human‐friendly interfaces …
distinguished portability, conformal contact characteristics, and human‐friendly interfaces …
High-precision and linear weight updates by subnanosecond pulses in ferroelectric tunnel junction for neuro-inspired computing
Z Luo, Z Wang, Z Guan, C Ma, L Zhao, C Liu… - Nature …, 2022 - nature.com
The rapid development of neuro-inspired computing demands synaptic devices with ultrafast
speed, low power consumption, and multiple non-volatile states, among other features …
speed, low power consumption, and multiple non-volatile states, among other features …
Flexible ZnO Nanosheet‐Based Artificial Synapses Prepared by Low‐Temperature Process for High Recognition Accuracy Neuromorphic Computing
YL Wang, M Cao, J Bian, Q Li… - Advanced Functional …, 2022 - Wiley Online Library
In neuromorphic computing networks, a flexible synaptic memristor with high recognition
accuracy is highly desired. In this study, ZnO nanosheets (ZnO NS) embedded within a …
accuracy is highly desired. In this study, ZnO nanosheets (ZnO NS) embedded within a …
Fluorite‐Structured Ferroelectric and Antiferroelectric Materials: A Gateway of Miniaturized Electronic Devices
Ferroelectric (FE) and antiferroelectric (AFE) materials are used for several memory‐related
and energy‐related applications. Perovskite materials (eg, bulk ceramics) remain the most …
and energy‐related applications. Perovskite materials (eg, bulk ceramics) remain the most …
Multilevel resistive switching memristor based on silk fibroin/graphene oxide with image reconstruction functionality
S Liu, Y Cheng, F Han, S Fan, Y Zhang - Chemical Engineering Journal, 2023 - Elsevier
Multilevel storage memristors have great potential for use in neuromorphic computing, high-
density storage, and the creation of artificial synapses. In this work, we report a multilevel …
density storage, and the creation of artificial synapses. In this work, we report a multilevel …
Ferroelectric-based synapses and neurons for neuromorphic computing
The shift towards a distributed computing paradigm, where multiple systems acquire and
elaborate data in real-time, leads to challenges that must be met. In particular, it is becoming …
elaborate data in real-time, leads to challenges that must be met. In particular, it is becoming …
Synaptic and Gradual Conductance Switching Behaviors in CeO2/Nb–SrTiO3 Heterojunction Memristors for Electrocardiogram Signal Recognition
H Li, S Geng, T Liu, MH Cao, J Su - ACS Applied Materials & …, 2023 - ACS Publications
The synaptic properties of memristors have been widely studied. However, researchers are
still committed to solving various challenges, including the study of highly reliable …
still committed to solving various challenges, including the study of highly reliable …
Exploration of threshold and resistive-switching behaviors in MXene/BaFe12O19 ferroelectric memristors
M Zhang, X Chen, Z Chen, R Dan, Y Wei, H Rong… - Applied Surface …, 2023 - Elsevier
Ferroelectric memristors have great potentials to be the key computational element of the
brain-inspired neuromorphic system due to their excellent endurance, multi-bit storage …
brain-inspired neuromorphic system due to their excellent endurance, multi-bit storage …
High-Speed Switching and Giant Electroresistance in an Epitaxial Hf0.5Zr0.5O2-Based Ferroelectric Tunnel Junction Memristor
X Du, H Sun, H Wang, J Li, Y Yin… - ACS Applied Materials & …, 2021 - ACS Publications
HfO2-based ferroelectric materials are good candidates for constructing next-generation
nonvolatile memories and high-performance electronic synapses and have attracted …
nonvolatile memories and high-performance electronic synapses and have attracted …