We report the potential of low-cost sol–gel-synthesized phase pure BiFeO3 thin films as an
active material with Cu as the top contact and fluorine-doped tin oxide (FTO) as the bottom …

The ability of ferroelectric memristors to modulate conductance and offer multilevel storage
has garnered significant attention in the realm of artificial synapses. On one hand, the …

The characteristic of self-recovery holds significant implications for upholding performance
stability within flexible electronic devices following the release of mechanical deformation …

Abstract BaTiO 3 (BTO) ferroelectric films, which are renowned for their lead-free
compositions, superior stability, and absence of a wake-up effect, are promising candidate …

Artificial intelligence (AI) has rapidly evolved and sparked a heightened interest in the field
of bionic electronics. A key focus in this field is to emulate biological neural networks and …

This research investigates the structural, topological, electrical and optical properties of
pulsed laser deposited polycrystalline BiFeO 3 thin films on silicon and glass substrate at …

We demonstrated a flexible artificial synapse device with a structure of Al/Cs 3 Bi 2 I 9/ITO. It
is found that the device displays a resistive switching behavior, effectively simulating the …

Abstract The traditional Von Neumann Architecture relies on the separation of memory and
CPU, leading to bottlenecks like slow data transfer and high energy consumption. This is …

Exotic polarization domain configurations in BiFeO 3 nanoislands have recently been
achieved, promising for exploring next-generation nanoelectronics. Here, different from the …

The ferroelectric memristor, as a new type of nonvolatile memory, has a broad prospect in
the fields of information storage, exchange, and neural computing. Nowadays, it is still a …