Analysis of the emission efficiency of powerful semiconductor lasers under closed-mode threshold...

Fundamental aspects of closed optical mode formation in Fabry–Perot semiconductor lasers based on AlGaAs/GaAs (905 nm) asymmetric heterostructures

SO Slipchenko, AA Podoskin, NA Pikhtin… - Laser …, 2014 - iopscience.iop.org
Experimental static and dynamic electro-optical characteristics of 905 nm high power mesa-
stripe semiconductor laser diodes based on an AlGaAs/GaAs asymmetric heterostructure …
被引用次数：26 相关文章 所有 5 个版本

Optical-cell model based on the lasing competition of mode structures with different Q-factors in high-power semiconductor lasers

AA Podoskin, IS Shashkin, SO Slipchenko, NA Pikhtin… - Semiconductors, 2015 - Springer
A model describing the operation of a completely optical cell, based on the competition of
lasing of Fabry-Perot cavity modes and the high-Q closed mode in high-power …
被引用次数：4 相关文章 所有 9 个版本

All-optical modulator cells based on AlGaAs/GaAs/InGaAs 905-nm laser heterostructures

AA Podoskin, IS Shashkin, SO Slipchenko… - Technical Physics …, 2017 - Springer
All-optical cells based on AlGaAs/GaAs/InGaAs laser heterostructures for a 905-nm
wavelength have been developed, which operate in the regime of optical-power modulation …
被引用次数：2 相关文章 所有 9 个版本