This study investigates the performance of SnO2 thin-film transistors (TFTs) fabricated with
vertically controlled carrier concentrations using a sol–gel method. In the proposed …

Oxide semiconductor thin‐film transistors (TFTs) with low‐voltage operation, excellent
device performance, and bias stability are highly desirable for portable and wearable …

Radiation hardness is important for electronics operating in harsh radiation environments
such as outer space and nuclear energy industries. In this work, radiation-hardened solution …

In this article, the preparation of HfLaO x gate dielectric thin films by the spin coating method
is proposed. The in-depth physical properties of the as-prepared HfLaO x films were …

In this paper, we report aqueous solution-processed boron-doped gallium oxide dielectric
thin films for high-performance oxide thin-film transistors. The role of B incorporation on the …

High-performance p-type thin-film transistors (TFTs) with high field-effect mobility and high
on/off current ratios (I on/I off) were fabricated by engineering the microstructure and surface …

Amorphous In2O3 is an emerging metal oxide semiconductor that is used widely because of
its high mobility and solution processability. Fully aqueous processing methods without …

One-dimensional (1D) nanofibers have been considered to be important building blocks for
nano-electronics due to their superior physical and chemical properties. In this report, high …

This article demonstrates lithium oxide (LiO and aluminum oxide (AlO bilayer dielectric-
based ultralow-voltage operable organic field effect transistors (OFETs). Both dielectrics are …

Recently inorganic-organic hybrid materials have been quickly arisen as promising
dielectric candidates for their applications in the fabrication of solution-processed metal …