In this valuable reference work, Ichiro Fujieda focuses on the component technologies,
device configurations, and operation principles of image acquisition and display …

Admittance (Ym) versus applied gate bias (VG) on MIS structure (Cr/a-SiNx: H/p-Si) was
measured as a function of frequency (mHz–MHz)/temperature (77–400K) as parameters to …

Thin film transistors (TFTs) made of silicon nitride and silicon carbide as dielectric were
submitted to N2, H2 and O2 plasma treatment of the insulator/semiconductor interface …

Fluorinated silicon-nitride films have been prepared from an Ar/SiF 4/NH 3 gas mixture by
inductively coupled remote plasma-enhanced chemical vapor deposition (IC-RPECVD) at …

Active-matrix organic light-emitting display (AMOLED) is now generally viewed as the next
generation display because of its vivid color, high contrast ratio, thin/light module, and low …

Scaling of CMOS towards its ultimate limits, where quantum effects and atomistic variability
due to fabrication, along with recent emphasis on heterogeneous integration of non-digital …

This dissertation is focused on the development of thin film transistors (TFTs) using oxide
materials composed of post-transitional cations with (n-1) d 10 ns 0 (n≥ 4). The goal is to …

Thin Film Transistors were deposited with different insulator/semiconductor interfaces using
silicon nitride (a-SiNX) as bulk dielectric, to determine what interface modification technique …

Amorphous silicon thin film transistors (TFT's), utilizing silicon dioxide (SiO2), silicon
oxynitride (SiOxNy) and silicon nitride (Si3N4) obtained by PECVD as gate insulating …

The goal of this investigation was to ascertain a viable low temperature gate dielectric for an
emerging TFT fabrication process at RIT. Various candidates were investigated to find the …