A method for depositing a metal film onto a substrate is disclosed. In particular, the method
comprises pulsing a metal halide precursor onto the substrate and pulsing a decaborane …

The invention relates to depositing a layer on a substrate in a reactor, by: introducing a first
precursor comprising a silicon halide in the reactor; introducing a second precursor in the …

A method for depositing an oxide film on a substrate by thermal ALD and PEALD, includes:
providing a substrate in a reaction chamber; depositing a first oxide film on the substrate by …

Methods for forming a metallic film on a substrate by cyclical deposition are provided. In
some embodiments methods may include contacting the substrate with a first reactant …

Provided is a method of depositing a thin film on a pattern structure of a semiconductor
substrate, the method including (a) supplying a source gas;(b) supplying a reactive gas; and …

A method for forming a forming a semiconductor structure is disclosed. The method may
include: forming a silicon oxide layer on a surface of a substrate, depositing a silicon …

Primary Examiner—Mohammad Choudhry (74) Attorney, Agent, or Firm—Snell & Wilmer
LLP ABSTRACT A method of reforming an insulating film deposited on a substrate having a …

2017-02-28 Assigned to ASM IP HOLDING BV reassignment ASM IP HOLDING BV
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …

(57) ABSTRACT A method of processing a substrate by omitting a photo lithographic
process is disclosed. The method includes forming at least one layer on a stepped structure …

A chemical dispensing apparatus for providing a chlorine vapor to a reaction chamber is
disclosed. The chemical dispensing apparatus may include: a chemical storage vessel …