Methods for forming a semiconductor device structure are provided. The methods may
include forming a molybdenum nitride film on a substrate by atomic layer deposition by …

A method of forming an electrode on a substrate is disclosed. The method may include:
contacting the substrate with a first vapor phase reactant comprising a titanium tetraiodide …

A method for depositing a Group IV semiconductor is disclosed. The method may include,
providing a substrate within a reaction chamber and heating the substrate to a deposition …

(57) ABSTRACT A method for depositing a Group IV semiconductor on a surface of a
substrate is disclosed. The method may include: providing a substrate within a reaction …

A method for forming a forming a silicon germanium tin (SiGeSn) layer is disclosed. The
method may include, pro viding a substrate within a reaction chamber, exposing the …

5,158,128 A D330, 900 S 5,167,716 A 5,176,451 A 5,178,682 A 5,181,779 A 5,183,511 A
5,192,717 A 5,194,401 A 5,199,603 A 5,213,650 A 5,221,556 A 5,225,366 A 5,226,383 A …

A method of processing a substrate by omitting a photolithographic process is disclosed.
The method includes forming at least one layer on a stepped structure having an upper …

2022-03-29 Assigned to ASM IP HOLDING BV reassignment ASM IP HOLDING BV
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …

The disclosure relates to substrate processing apparatus, with a first and second reactor,
each reactor configured with an elevator to transfer a boat with substrates to the reactor. The …

Methods for depositing a co-doped polysilicon film on a surface of a substrate within a
reaction chamber are provided. The method may include: heating the substrate to a …