A method for forming a silicon-containing epitaxial layer is disclosed. The method may
include, heating a substrate to a temperature of less than approximately 950 C. and …

A film having filling capability is deposited by forming a viscous polymer in a gas phase by
striking an Ar, He, or N2 plasma in a chamber filled with a volatile hydrocarbon precursor …

(57) ABSTRACT A flange, flange assembly, and reactor system including the flange and
flange assembly are disclosed. An exemplary flange assembly includes heated and cooled …

A method for forming a silicon nitride film on a substrate is disclosed. The method may
include; forming a cyclical silicon nitride film on the substrate by a cyclical deposition …

The invention relates to a substrate rack and a substrate processing system for processing
substrates in a reaction chamber. The substrate rack may be used for introducing a plurality …

(57) ABSTRACT A method of depositing a thin film having a desired etching characteristic
while improving a loss amount and loss uni formity of a lower film includes, on the …

A reactor having a housing that encloses a gas delivery system operatively connected to a
reaction chamber and an exhaust assembly. The gas delivery system includes a plurality of …

H01L21/02112—Forming insulating materials on a substrate characterised by the type of
layer, eg type of material, porous/non-porous, pre-cursors, mixtures or laminates …

A method for forming layers suitable for a V-NAND stack is disclosed. Specifically, the
method may include multiple cycles for forming an oxide and a nitride in order to form an …

2020-01-26 Assigned to ASM IP HOLDING BV reassignment ASM IP HOLDING BV
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …