Methods for forming a semiconductor device and related semiconductor device structures
are provided. In some embodiments, methods may include forming an NMOS gate dielectric …

A method for depositing a boron doped silicon germanium (Si 1-x Ge x) film is disclosed.
The method may include: providing a substrate within a reaction chamber; heating the …

A method of forming, on a substrate having a recess pattern, a silicon carbide film having a
reflective index of 2.3 or higher as measured at 633 nm, includes (i) supplying an …

2017-12-07 Assigned to ASM IP HOLDING BV reassignment ASM IP HOLDING BV
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …

A substrate processing apparatus having an improved film processing uniformity is provided.
The substrate processing apparatus includes a partition configured to provide a gas supply …

FIG. 1 is a perspective view of a gas supply plate for semiconductor manufacturing
apparatus showing my new design; FIG. 2 is a front elevational view thereof; FIG. 3 is a rear …

(57) ABSTRACT A method for selectively depositing a metal oxide film is disclosed. In
particular, the method comprises pulsing a metal or semi-metal precursor onto the substrate …

D31. 889 S D56, 051 S 2, 059, 480 A 2, 161, 626 A 2, 266, 416 A 2, 280, 778 A 2, 410, 420 A
2, 563, 931 A 2, 660. 061 A 2, 745, 640 A 2, 990, 045 A 3, 038, 951 A 3, 089, 507 A

The disclosure relates to substrate processing apparatus, with a first and second reactor,
each reactor configured for processing a plurality of substrates; and, a substrate handling …

2021-09-29 Assigned to ASM IP HOLDING BV reassignment ASM IP HOLDING BV
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …