Methods for etching a carbon-containing feature are provided. The methods may include:
providing a substrate having a carbon-containing feature formed thereon in a reaction …

A gas distribution system is disclosed in order to obtain better film uniformity on a substrate
in a cross-flow reactor. The better film uniformity may be achieved by an asymmetric bias on …

Embodiments related to managing the process feed conditions for a semiconductor process
module are provided. In one example, a gas channel plate for a semiconductor process …

C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL;
CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; …

(54) METHODS FOR FORMING A TRANSITION METAL NITRIDE FILM ON A SUBSTRATE
BY ATOMIC LAYER DEPOSITION AND RELATED SEMICONDUCTOR DEVICE …

An apparatus and method are disclosed for monitoring and/or detecting concentrations of a
chemical precursor in a reaction chamber. The apparatus and method have an advan tage …

A method for depositing a film by plasma-enhanced subatmospheric-pressure atomic layer
deposition (subatmospheric PEALD) is conducted using capacitively coupled parallel plate …

2022-08-31 Assigned to ASM IP HOLDING BV reassignment ASM IP HOLDING BV
ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors …

A method of spacer-defined direct patterning in semiconductor fabrication includes:
providing a photoresist structure having a target width of lines; trimming the photoresist …

Methods for thermally calibrating reaction chambers are provided. In some embodiments,
methods may include calculating a first correction factor of a first contact type temperature …