Large area thin film position sensitive detectors based on amorphous silicon technology
have been prepared on polyimide substrates using the conventional plasma-enhanced …

In this paper, for the first time, we report a significant enhancement of the lateral photovoltaic
effect (LPE) in a hydrogenated amorphous silicon/monocrystalline Si (a-Si: H/c-Si) p–i–n …

This work reported on detecting properties of ap+-in+ position-sensitive detector (PSD)
which has a thin heavily-doped p+-GaAs layer and a thick lightly-doped i-GaAs layer as a …

The linearity and sensitivity of linear Position Sensitive Detectors (PSD) are the two principal
characteristics of sensors to be optimised in sensor fabrication. This work presents several …

In this paper, we report on a large lateral photovoltaic effect (LPE) in a hydrogenated
microcrystal silicon-oxygen (µc-SiO x: H)-based p–i–n structure. Compared with LPE in a …

In this paper we report on large area one dimensional (1D) amorphous silicon position
sensors deposited on flexible polymer foil substrate. The pin sensor structure was deposited …

A GaAs-based pin structure which is layer-compatible to a commercial heterojunction
bipolar transistor (HBT) was employed to fabricate a visible-light position-sensitive detector …

This work reports on the fabrication process and performances presented by metal insulator
semiconductor (MIS) linear position sensitive detectors (PSD) with an active length of 6cm …

The aim of this paper is to present data concerning the performances of position sensitive
detectors based on silicon carbide alloys, able to detect the green colour and to compare …

In this paper we present results concerning the performance exhibited by an integrated array
of 32 one-dimensional amorphous silicon thin film position sensitive detectors based on nip …