Thermoelectric materials have garnered considerable attention due to their unique ability to
directly convert heat to electricity and vice versa. Polymers carry many intrinsic advantages …

Thermal to electrical energy conversion, through thermoelectric and thermionic materials,
has been proposed to be much more efficient in lower dimensional materials at the …

Filled skutterudites R x Co4Sb12 are excellent n-type thermoelectric materials owing to their
high electronic mobility and high effective mass, combined with low thermal conductivity …

The local-density approximation (LDA) together with the half occupation (transition state) is
notoriously successful in the calculation of atomic ionization potentials. When it comes to …

We have determined the dielectric functions of ZnO: Ga and In 2 O 3: Sn with different carrier
concentrations by spectroscopic ellipsometry. The dielectric functions have been obtained …

Zinc oxide (ZnO) is a II-VI compound semiconductor with a wide direct band gap of 3.37 eV
and a large exciton binding energy of 60 meV at room temperature. 1–3 The band gap of …

Degenerate n-type doping of semiconductors results in optical band-gap widening through
occupation of the conduction band, which is partially offset by the so-called band-gap …

A comprehensive model for the electronic transport in polycrystalline ZnO: B thin films grown
by low pressure chemical vapor deposition is presented. The optical mobilities and carrier …

This study addresses the electrical and optical properties of radio frequency magnetron
sputtered aluminum doped zinc oxide (ZnO: Al) films. The main focus was on the …

The behavior of nitrogen in ZnO thin films grown by high-vacuum plasma-assisted chemical
vapor deposition is examined. Highly oriented (002) films doped with 0–2 at.% N were …