Optical characterization of textured SnO2: F layers using spectroscopic ellipsometry
M Akagawa, H Fujiwara - Journal of Applied Physics, 2012 - pubs.aip.org
The SnO 2: F transparent conductive oxide (TCO) layers with submicron-size textured
structures have been characterized using spectroscopic ellipsometry (SE). By applying the …
structures have been characterized using spectroscopic ellipsometry (SE). By applying the …
Experimental electron mobility in ZnO: A reassessment through Monte Carlo simulation
The low-field electron mobility in bulk ZnO has been the object of extensive experimental
studies, mainly through measurement of the temperature-dependent Hall effect. In this work …
studies, mainly through measurement of the temperature-dependent Hall effect. In this work …
Efficacy of the method of four coefficients to determine charge-carrier scattering
The investigation of the electronic properties of semiconductors from transport
measurements (ie, resistivity, Hall, and Seebeck coefficient measurements) is challenging …
measurements (ie, resistivity, Hall, and Seebeck coefficient measurements) is challenging …
Thermoelectric properties of Bi0.4Sb1.6Te3-based composites with silicon nano-inclusions
Y Dou, X Yan, Y Du, J Xu, D Li - Journal of Materials Science: Materials in …, 2020 - Springer
Abstract Si/Bi 0.4 Sb 1.6 Te 3 bulk composites have been prepared by combining
mechanical alloying with spark plasma sintering, and their thermoelectric properties have …
mechanical alloying with spark plasma sintering, and their thermoelectric properties have …
The feeble role of oxygen vacancies in magnetic coupling in ZnO based dilute magnetic semiconductors
MHN Assadi, YB Zhang, S Li - Journal of Physics: Condensed …, 2010 - iopscience.iop.org
The role of the oxygen vacancy (VO) as the dominant defect in ZnO in magnetic interactions
of ZnO based dilute magnetic semiconductors (DMSs) was examined in detail using density …
of ZnO based dilute magnetic semiconductors (DMSs) was examined in detail using density …
Pivotal role of carrier scattering for semiconductorlike transport in
A quarter century ago, a semiconductorlike resistivity was observed in the ternary Fe 2 VAl
Heusler alloy, sparking great interest in this material. Here, we reinvestigate the origin of this …
Heusler alloy, sparking great interest in this material. Here, we reinvestigate the origin of this …
[图书][B] A colloidal nanoparticle form of indium tin oxide: system development and characterization
RA Gilstrap Jr - 2009 - search.proquest.com
A logical progression from the maturing field of colloidal semiconductor quantum dots to the
emerging subclass of impurity-doped colloidal semiconductor nanoparticles is underway. To …
emerging subclass of impurity-doped colloidal semiconductor nanoparticles is underway. To …
Different magnetothermoelectric behavior in Al-and Ga-doped ZnO thin films
H Liu, L Fang, D Tian, F Wu, W Li - Journal of alloys and compounds, 2014 - Elsevier
This essay mainly focuses on the influence of magnetic filed on thermoelectric properties of
Al-doped ZnO (AZO) and Ga-doped ZnO (GZO) thin films. The Seebeck coefficients (S) of …
Al-doped ZnO (AZO) and Ga-doped ZnO (GZO) thin films. The Seebeck coefficients (S) of …
Predominant role of defects in magnetic interactions in codoped ZnO: Co
MHN Assadi, YB Zhang, S Li - Journal of Physics: Condensed …, 2010 - iopscience.iop.org
The roles of codoping ions (Li, Ga and Cu) and defects (oxygen vacancy and hydrogen
impurity) in magnetic interactions in ZnO: Co systems have been studied systematically …
impurity) in magnetic interactions in ZnO: Co systems have been studied systematically …
Ga 掺杂ZnO 薄膜的MOCVD 生长及其特性
朱顺明， 叶建东， 顾书林， 刘松民， 郑有炓， 张荣… - 半导体学报: 英文 …, 2005 - cqvip.com
低压MOCVD 技术在(0002) 蓝宝石上外延获得高质量的ZnO: Ga 单晶薄膜, 并研究了Ga
的不同掺杂浓度对材料电学和光学特性的影响. 当Ga/Zn 气相摩尔比为3.2 at% 时, ZnO (0002) …
的不同掺杂浓度对材料电学和光学特性的影响. 当Ga/Zn 气相摩尔比为3.2 at% 时, ZnO (0002) …