BSTJ brief: the buried channel charge coupled device
RH Walden, RH Krambeck, RJ Strain… - The Bell System …, 1972 - ieeexplore.ieee.org
The charge-coupled device, as described originally by Boyle and Smith, 1 operates by
moving minority carriers along the surface of a semiconductor with voltage pulses applied to …
moving minority carriers along the surface of a semiconductor with voltage pulses applied to …
Free charge transfer in charge-coupled devices
JE Carnes, WF Kosonocky… - IEEE Transactions on …, 1972 - ieeexplore.ieee.org
The free charge-transfer characteristics of charge-coupled devices (CCD's) are analyzed in
terms of the charge motion due to thermal diffusion, self-induced drift, and fringing field drift …
terms of the charge motion due to thermal diffusion, self-induced drift, and fringing field drift …
History and advancement of large array scientific CCD imagers
J Janesick, T Elliott - Astronomical CCD Observing and …, 1992 - adsabs.harvard.edu
This paper summarizes progress made in the past eighteen years in the development of the
scientific charge-coupled device at JPL in collaboration with several CCD manufacturers …
scientific charge-coupled device at JPL in collaboration with several CCD manufacturers …
Charge-coupled devices-a new approach to mis device structures
WS Boyle, GE Smith - IEEE spectrum, 1971 - ieeexplore.ieee.org
Recent advances in materials and processing have resulted in a new class of information-
handling structure-the charge-coupled device. This three-layer structure creates and stores …
handling structure-the charge-coupled device. This three-layer structure creates and stores …
Charge Transfer in Charge‐Coupled Devices
CK Kim, M Lenzlinger - Journal of Applied Physics, 1971 - pubs.aip.org
The transfer characteristics of charge‐coupled devices have been investigated theoretically
and simulated experimentally. The transport of minority carriers along the Si–SiO2 interface …
and simulated experimentally. The transport of minority carriers along the Si–SiO2 interface …
A model for charge transfer in buried-channel charge-coupled devices at low temperature
EK Banghart, JP Lavine, EA Trabka… - IEEE transactions on …, 1991 - ieeexplore.ieee.org
Charge transfer in buried-channel charge-coupled devices (CCDs) is explored with a one-
dimensional numerical model which describes the capture and emission of electrons from a …
dimensional numerical model which describes the capture and emission of electrons from a …
Charge-coupled imaging devices: Design considerations
GF Amelio, WJ Bertram… - IEEE Transactions on …, 1971 - ieeexplore.ieee.org
In this paper some of the parameters relevant to the design of charge-coupled imaging
devices are considered. Among these are charge storage capability, transfer efficiency …
devices are considered. Among these are charge storage capability, transfer efficiency …
Use of charge-coupled devices for delaying analog signals
MF Tompsett, EJ Zimany - IEEE Journal of Solid-State Circuits, 1973 - ieeexplore.ieee.org
The use of charge-coupled devices for delaying analog signals is discussed and
demonstrated. Some of the relevant operational factors of the CCD, such as the effect of …
demonstrated. Some of the relevant operational factors of the CCD, such as the effect of …
The interactive verification debugger: Effective understanding of interactive proof attempts
The Symbolic Execution Debugger (SED) is an extension of the Eclipse debug platform for
interactive symbolic execution. Like a traditional debugger, the SED can be used to locate …
interactive symbolic execution. Like a traditional debugger, the SED can be used to locate …
Computer Modeling of Charge‐Coupled Device Characteristics
GF Amelio - Bell System Technical Journal, 1972 - Wiley Online Library
Properties of various charge‐coupled device (CCD) configurations are investigated by
means of a computer model. The model is based on a numerical solution of the Poisson …
means of a computer model. The model is based on a numerical solution of the Poisson …