The enhancement of infrared characterization of passivated InAs nanowires
Q Li, J Li, H Chen, W Zhang, S Cao, F Chu, P Yu… - Micro and …, 2024 - Elsevier
Abstract Indium arsenide (InAs) nanowires (NWs) show significant advantages in
optoelectronic devices due to their excellent electronic and optical properties. While the …
optoelectronic devices due to their excellent electronic and optical properties. While the …
Improvement of the electrical performance of Ag/MEH-PPV/SiNWs Schottky diode by the insertion of a thin layer of MEH-PPV polymer and study of the annealing effect
Abstract Poly [2-methoxy-5-(2′-ethylhexyloxy)-1, 4-phenylene vinylene](MEH-PPV) thin
layer was deposited on silicon nanowires (SiNWs) by electroless dipping method. SiNWs …
layer was deposited on silicon nanowires (SiNWs) by electroless dipping method. SiNWs …
Integration of Fe3O4 nanospheres and micropyramidal textured silicon wafer with improved photoelectrochemical performance
L Zhang, W Chen, L Cheng, L Jiang, X Deng… - Journal of Materials …, 2021 - Springer
Silicon (Si)-based composites have attracted extensive attention for photoelectrochemical
(PEC) application. Herein, micropyramidal textured Si wafer was constructed by wet …
(PEC) application. Herein, micropyramidal textured Si wafer was constructed by wet …
A comparative study of the annealing atmosphere effect on bismuth particles dedicated for silicon nanowires growth catalyst
RB Zaghouani, MY Tabassi, J Bennaceur… - Journal of Crystal …, 2021 - Elsevier
In this work, we report on a facile fabrication method of bismuth nanoparticles consisting of
evaporation of bismuth thin layers under a controlled environment. The investigated …
evaporation of bismuth thin layers under a controlled environment. The investigated …