Solution-based Sb2Se3 thin films for microphotonics

R Sharma, C Schwarz, D Wiedeman… - Journal of Optical …, 2024 - spiedigitallibrary.org
The development of functional chalcogenide optical phase change materials holds
significant promise for advancing optics and photonics applications. Our comprehensive …

[HTML][HTML] Effect of Bi addition on the switching effect and structure of thin Ge2Sb2Te5 films prepared by ion-plasma RF co-sputtering

Z Tolepov, O Prikhodko, A Kolobov, G Ismailova… - Journal of Non …, 2024 - Elsevier
Abstract Ge 2 Sb 2 Te 5 (GST) films are widely used in non-volatile phase-change memory
devices, their properties can be fine-tuned by element doping. In this work, current-voltage …

[HTML][HTML] Compact non-volatile multilevel Sb2Se3 electro-optical switching in the mid-infrared group-IV-photonics platform

R Soref, F De Leonardis, M De Carlo… - Optics & Laser …, 2024 - Elsevier
This theoretical modeling and simulation paper presents designs and projected
performances of two non-volatile, broadband, on-chip 2× 2 electro-optical switches based …

Inverse Design of Unitary Transmission Matrices in Silicon Photonic Coupled Waveguide Arrays using a Neural Adjoint Model

TW Radford, PR Wiecha, A Politi, I Zeimpekis… - arXiv preprint arXiv …, 2024 - arxiv.org
The development of low-loss reconfigurable integrated optical devices enables further
research into technologies including photonic signal processing, analogue quantum …

Continuously-tunable, compact, freespace notch-filter design using an all-dielectric metagrating capped with a low-loss phase change material

D Tripathi, HS Vyas, R Hegde - Journal of Optics, 2024 - pubishingsupport.iopscience.iop.org
Active metasurfaces utilizing phase change materials (PCMs) are currently under
investigation for applications in free-space optical communication, optical signal processing …

Ultracompact programmable silicon photonics using layers of low-loss phase-change material SbSe of increasing thickness

S Blundell, T Radford, IA Ajia, D Lawson, X Yan… - arXiv preprint arXiv …, 2024 - arxiv.org
High-performance programmable silicon photonic circuits are considered to be a critical part
of next generation architectures for optical processing, photonic quantum circuits and neural …

[HTML][HTML] Physical Vapor Deposition of Indium-Doped GeTe: Analyzing the Evaporation Process and Kinetics

A Zaidan, V Ivanova, P Petkov - Inorganics, 2024 - mdpi.com
Chalcogenide glasses have broad applications in the mid-infrared optoelectronics field and
as phase-change materials (PCMs) due to their unique properties. Chalcogenide glasses …

EXPLORING THE STRUCTURAL AND ELECTRONIC CHARACTERISTICS OF AMORPHOUS Ge–Te-In MATERIAL THROUGH AB INITIO METHODS

A Zaidan, V Ivanova, P Petkov… - Journal of Chemical …, 2024 - j.uctm.edu
This study employs density functional theory (DFT) and molecular dynamics to meticulously
investigate the structural and electronic properties of ternary chalcogenide compounds …

Sb2S3-based resonant non-volatile multilevel optical memory

M De Carlo, F De Leonardis, R Soref… - 2024 24th …, 2024 - ieeexplore.ieee.org
In this paper, we show the idea of a non-volatile multilevel memory, realized with an optical
resonator. The crosssection of the resonator is realized with Si 3 N 4 buried in SiO 2, with …

Electrical switch of phase change materials: toward the control of crystallinity for multi-level reconfigurable nanophotonics

C Laprais, N Baboux, L Berguiga… - Active Photonic …, 2024 - spiedigitallibrary.org
Phase change materials (PCM) have gained a considerable interest in the photonics
community as active materials in reconfigurable devices. Their significant change of optical …