Abstract Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider
than the 3.4 eV of GaN, represent an exciting and challenging new area of research in …

Conductive diamond possesses unique features as compared to other solid electrodes,
such as a wide electrochemical potential window, a low and stable background current …

Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power
electronics with capabilities beyond existing technologies due to its large bandgap …

Progress in power electronic devices is currently accepted through the use of wide bandgap
materials (WBG). Among them, diamond is the material with the most promising …

Local variations in the charge distribution at semiconductor interfaces can lead to energy
level band bending in the structure's band diagram. Measuring this band bending is …

Ultrawide-bandgap (UWBG) semiconductor technology is presently going through a
renaissance exemplified by advances in material-level understanding, extensions of known …

SThe present paper investigates the nanoscale thermal transport at diamond/copper (dCu)
interfaces using the density functional theory (DFT) and the atomistic Green's function …

Enhancement-mode (E-mode) hydrogenated diamond (H-diamond) metal-oxide-
semiconductor field-effect transistors (MOSFETs) are fabricated with an Y 2 O 3 oxide …

This article provides a comprehensive review of wide and ultrawide bandgap power
electronic semiconductor devices, comparing silicon (Si), silicon carbide (SiC), gallium …

Surface transfer doping of diamond using high electron affinity transition metal oxides
(TMOs), such as MoO 3, has emerged as a key enabling technology for the development of …