[PDF][PDF] Diamond for electronics: Materials, processing and devices. Materials 2021, 14, 7081
Progress in power electronic devices is currently accepted through the use of wide bandgap
materials (WBG). Among them, diamond is the material with the most promising …
materials (WBG). Among them, diamond is the material with the most promising …
The use of conducting diamond in electrochemistry
JV Macpherson - Electrochemistry of Carbon Electrodes, 2015 - Wiley Online Library
This chapter provides a comprehensive discussion on the current understanding of the
fundamental factors controlling the response of boron‐doped diamond (BDD) electrodes …
fundamental factors controlling the response of boron‐doped diamond (BDD) electrodes …
High-field magnetotransport studies of surface-conducting diamonds
The observation of a strong and tunable spin-orbit interaction (SOI) in surface-conducting
diamond opens up a new avenue for building diamond-based spintronics. Herein we …
diamond opens up a new avenue for building diamond-based spintronics. Herein we …
Time-dependent degradation of hydrogen-terminated diamond MESFETs
C De Santi, L Pavanello, A Nardo… - … , RF, Millimeter, and …, 2022 - spiedigitallibrary.org
In this paper, we discuss the changes in the electrical performance induced by operating
time in hydrogen-terminated diamond MESFETs for high power and high frequency …
time in hydrogen-terminated diamond MESFETs for high power and high frequency …
[PDF][PDF] Einfluss von Versetzungen und Punktdefekten auf die elektronischen Eigenschaften von heteroepitaktischem Diamant
T Grünwald - 2023 - d-nb.info
Alle wesentlichen Untersuchungen finden dabei an den Probenserien MFAIX394,
MFAIX438 sowie einer weiteren Einzelprobe MFAIX484 statt. Die Probenserien bieten den …
MFAIX438 sowie einer weiteren Einzelprobe MFAIX484 statt. Die Probenserien bieten den …
Atomic Engineering of Diamond Surfaces with Group IV Elements
M Sear - 2023 - opal.latrobe.edu.au
Atomic Engineering of Diamond Surfaces with Group IV Elements Page 1 Atomic Engineering
of Diamond Surfaces with Group IV Elements Submitted by: Michael Jeffrey SEAR Bachelor of …
of Diamond Surfaces with Group IV Elements Submitted by: Michael Jeffrey SEAR Bachelor of …
Hydrogen-terminated diamond MESFETs: operating principles, static and dynamic performance, and reliability
C De Santi, L Pavanello, A Nardo… - … , RF, Millimeter, and …, 2021 - spiedigitallibrary.org
In this paper, we review the operating principles of hydrogen-terminated diamond MESFETs
for high power and high frequency applications. Thanks to the transfer of electrons from the …
for high power and high frequency applications. Thanks to the transfer of electrons from the …
Localized Surface Characterization of Boron-Doped Diamond Film Electrodes
FCI Catalan, Y Kim - Diamond Electrodes: Fundamentals and Applications, 2022 - Springer
The expanding application of boron-doped diamond (BDD) to various fields as an efficient
electrode and sensor has continuously encouraged fundamental investigations of its …
electrode and sensor has continuously encouraged fundamental investigations of its …
high power diamond devices with 2-D transport channels
DI Shahin, A Christou, JE Butler - ECS Transactions, 2017 - iopscience.iop.org
Diamond transistors with surface 2D conduction channels are projected to be radiation hard
with respect to neutrons. However, ionizing radiation hardness may be a problem due to the …
with respect to neutrons. However, ionizing radiation hardness may be a problem due to the …
Surface Transfer Doping of Oxidized Silicon Terminated (111) Diamond with MoO3
B Oslinker - 2023 - opal.latrobe.edu.au
Surface Transfer Doping of Oxidized Silicon Terminated (111) Diamond with MoO3 Page 1
Author: Brian Matthew Oslinker Bachelor of Science Supervisors: Prof. Chris Pakes Dr. Alex …
Author: Brian Matthew Oslinker Bachelor of Science Supervisors: Prof. Chris Pakes Dr. Alex …