Emerging applications for high K materials in VLSI technology
RD Clark - Materials, 2014 - mdpi.com
The current status of High K dielectrics in Very Large Scale Integrated circuit (VLSI)
manufacturing for leading edge Dynamic Random Access Memory (DRAM) and …
manufacturing for leading edge Dynamic Random Access Memory (DRAM) and …
A review of graphene nanoribbon field-effect transistor structures
S Lone, A Bhardwaj, AK Pandit, S Gupta… - Journal of Electronic …, 2021 - Springer
The ascending trend of Moore's law has stretched to the horizon, where the prospects of
carbon-based materials show the potential of replacing the silicon-based complementary …
carbon-based materials show the potential of replacing the silicon-based complementary …
Nonlinear vibration of nanosheets subjected to electromagnetic fields and electrical current
Graphene Nanosheets play an important role in nanosensors due to their proper surface to
volume ratio. Therefore, the main purpose of this paper is to consider the nonlinear vibration …
volume ratio. Therefore, the main purpose of this paper is to consider the nonlinear vibration …
Armchair graphene nanoribbon resonant tunneling diodes using antidote and BN doping
Band gap size of armchair graphene nanoribbons (AGNRs) can be tuned by implementing
topological antidotes or boron/nitride (BN) atoms at the middle of ribbons. By imposing such …
topological antidotes or boron/nitride (BN) atoms at the middle of ribbons. By imposing such …
Graphene nanoribbon field effect transistors analysis and applications
The dimension down scaling capability of the silicon based transistors has produced
significant developments in the electronic industry. The channel length reduction has been …
significant developments in the electronic industry. The channel length reduction has been …
Band gap tuning of armchair graphene nanoribbons by using antidotes
The electronic properties of armchair graphene nanoribbons (AGNRs) can be changed by
creating antidotes within the pristine ribbons and producing antidote super lattice AGNRs …
creating antidotes within the pristine ribbons and producing antidote super lattice AGNRs …
Terahertz detection by epitaxial-graphene field-effect-transistors on silicon carbide
F Bianco, D Perenzoni, D Convertino… - Applied Physics …, 2015 - pubs.aip.org
We report on room temperature detection of terahertz radiation by means of antenna-
coupled field effect transistors (FETs) fabricated using epitaxial graphene grown on silicon …
coupled field effect transistors (FETs) fabricated using epitaxial graphene grown on silicon …
Organic semiconductor photosensors
Coumarin doped with poly (3-hexylthiophene)/p-Si photodiodes were prepared by the drop-
casting technique. The current–voltage characteristics of the prepared diodes with the …
casting technique. The current–voltage characteristics of the prepared diodes with the …
Approach for MVL design based on armchair graphene nanoribbon field effect transistor and arithmetic circuits design
This paper presents the approach for multiple-valued logic (MVL) design and implementing
the arithmetic circuit based on armchair graphene nanoribbon field effect transistors …
the arithmetic circuit based on armchair graphene nanoribbon field effect transistors …
New photodiodes based graphene-organic semiconductor hybrid materials
New photodiodes based graphene-organic semiconductor hybrid materials were fabricated
for the first time using sol–gel spin coating technique. The current–voltage characteristics of …
for the first time using sol–gel spin coating technique. The current–voltage characteristics of …