Edge enhanced growth induced shape transition in the formation of GaN nanowall network
We address the mechanism of early stages of growth and shape transition of the unique
nanowall network (NwN) of GaN by experimentally monitoring its morphological evolution …
nanowall network (NwN) of GaN by experimentally monitoring its morphological evolution …
Optical gain and threshold current density of strained wurtzite GaN/AlGaN quantum dot lasers
H Bouchenafa, B Benichou - Revista Mexicana de Física, 2023 - rmf.smf.mx
In this work, the influences of biaxial compressive and tensile strains on optical gain and
threshold current density are investigated theoretically as a function of the side lengths of the …
threshold current density are investigated theoretically as a function of the side lengths of the …
Qualitative study of Indium Gallium Nitride (InGaN)–based solar cell.
Z NACEUR INTISSAR - archives.univ-biskra.dz
Dans ce travail, nous avons étudié trois cellules solaires PIN basées sur 𝐼𝑛𝐺𝑎𝑁. Le
premier est une homojonction 𝐼𝑛𝐺𝑎𝑁 unique (structure A), le deuxième est une …
premier est une homojonction 𝐼𝑛𝐺𝑎𝑁 unique (structure A), le deuxième est une …