Hafnium Oxide (HfO2) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories
Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …
in the memory arena over the last two decades. Its dielectric properties have been …
Revival of ferroelectric memories based on emerging fluorite‐structured ferroelectrics
Over the last few decades, the research on ferroelectric memories has been limited due to
their dimensional scalability and incompatibility with complementary metal‐oxide …
their dimensional scalability and incompatibility with complementary metal‐oxide …
Enhanced ferroelectricity in ultrathin films grown directly on silicon
Ultrathin ferroelectric materials could potentially enable low-power logic and nonvolatile
memories,. As ferroelectric materials are made thinner, however, the ferroelectricity is …
memories,. As ferroelectric materials are made thinner, however, the ferroelectricity is …
Reversible oxygen migration and phase transitions in hafnia-based ferroelectric devices
Unconventional ferroelectricity exhibited by hafnia-based thin films—robust at nanoscale
sizes—presents tremendous opportunities in nanoelectronics. However, the exact nature of …
sizes—presents tremendous opportunities in nanoelectronics. However, the exact nature of …
Ferroelectric transistors for memory and neuromorphic device applications
Ferroelectric materials have been intensively investigated for high‐performance nonvolatile
memory devices in the past decades, owing to their nonvolatile polarization characteristics …
memory devices in the past decades, owing to their nonvolatile polarization characteristics …
Low Operating Voltage, Improved Breakdown Tolerance, and High Endurance in Hf0.5Zr0.5O2 Ferroelectric Capacitors Achieved by Thickness Scaling Down to 4 …
K Toprasertpong, K Tahara, Y Hikosaka… - … Applied Materials & …, 2022 - ACS Publications
The comparatively high coercive field in Hf0. 5Zr0. 5O2 (HZO) and other HfO2-based
ferroelectric thin films leads to two critical challenges for their application in embedded …
ferroelectric thin films leads to two critical challenges for their application in embedded …
Graphene and beyond: recent advances in two-dimensional materials synthesis, properties, and devices
Since the isolation of graphene in 2004, two-dimensional (2D) materials research has
rapidly evolved into an entire subdiscipline in the physical sciences with a wide range of …
rapidly evolved into an entire subdiscipline in the physical sciences with a wide range of …
Roadmap on ferroelectric hafnia-and zirconia-based materials and devices
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
over the last decade, pushing them to the forefront of ultralow-power electronic systems …
Engineering the defects and microstructures in ferroelectrics for enhanced/novel properties: an emerging way to cope with energy crisis and environmental pollution
In the past century, ferroelectrics are well known in electroceramics and microelectronics for
their unique ferroelectric, piezoelectric, pyroelectric, and photovoltaic effects. Nowadays, the …
their unique ferroelectric, piezoelectric, pyroelectric, and photovoltaic effects. Nowadays, the …
Mimicking biological neurons with a nanoscale ferroelectric transistor
Neuron is the basic computing unit in brain-inspired neural networks. Although a multitude
of excellent artificial neurons realized with conventional transistors have been proposed …
of excellent artificial neurons realized with conventional transistors have been proposed …