Over the past five decades, LiNbO3 and LiTaO3 single crystals and thin films have been
studied intensively for their exceptional acoustic, electro‐optical, and pyroelectric and …

With the use of ferroelectric materials in memory devices and the need for high speed
integrated optics devices, the interest in ferroelectric thin films continues to grow. With their …

To fabricate AlGaN/gallium nitride (GaN) enhancement-mode metal-oxide-semiconductor
high-electron mobility transistors (E-MOSHEMTs), the gate-recessed structure and the …

The main directions of application and synthesis of lithium niobate (LiNbO 3) and the
advantages and drawbacks of the synthesis techniques are considered. The results of …

Abstract Multifunctional Si–LiNbO 3 heterostructures were synthesized by the radio-
frequency magnetron sputtering (RFMS) method. The structural and electrical properties of …

The direction of ferroelectric polarization is prescribed by the symmetry of the crystal
structure. Therefore, rotation of the polarization direction is largely limited, despite the …

Successful application of the LiNbO3-based heterostructures in the integrated electronics
and optoelectronics is mostly determined by the charge transport phenomenon in the …

LiNbO3 (LNO) films were epitaxially grown on n-type GaN templates using pulsed laser
deposition technique. The microstructures and electrical properties of the LNO/GaN …

Temperature dependent threshold voltage (V th) variation of GaN/AlGaN/Gd 2 O 3/Ni-Au
structure is investigated by capacitance-voltage measurement with temperature varying from …

Charge trapping, especially electron trapping phenomena in GaN/AlGaN/Gd 2 O 3/Ni–Au
metal-oxide-semiconductor structure have been investigated. Owing to crystallization of Gd …