Selective area doping of GaN toward high-power applications
Selective area doping in GaN, especially p-type, is a critical and inevitable building block for
the realization of advanced device structures for high-power applications, including, but not …
the realization of advanced device structures for high-power applications, including, but not …
Investigation of vertical GaN-on-GaN p–n diode with regrown p-GaN for operation in Venus and other extreme environments
This Letter reports the performance of vertical GaN-on-GaN p–n diodes with etch-then-
regrown p-GaN after exposure to a simulated Venus environment (460 C,∼ 94 bar …
regrown p-GaN after exposure to a simulated Venus environment (460 C,∼ 94 bar …
[HTML][HTML] Gate protection for vertical gallium nitride trench MOSFETs: The buried field shield
AT Binder, JA Cooper, J Steinfeldt, AA Allerman… - e-Prime-Advances in …, 2023 - Elsevier
This paper describes a process for forming a buried field shield in GaN by an etch-and-
regrowth process, which is intended to protect the gate dielectric from high fields in the …
regrowth process, which is intended to protect the gate dielectric from high fields in the …
Selective Area Growth, Etching, and Doping of GaN By MOCVD for Power Electronics
GaN electronics have been gaining traction in the low-voltage market (< 650 V) using
mature hetero field-effect transistors (HFETs). For high-voltage and high-power application …
mature hetero field-effect transistors (HFETs). For high-voltage and high-power application …
Low-damage, in-situ chemical etching of GaN by tertiarybutyl-chloride (TBCl)
In this study, we compared different process-treated surfaces by building Schottky diodes,
and performing photoluminescence (PL) and Rutherfold backscattering (RBSc) …
and performing photoluminescence (PL) and Rutherfold backscattering (RBSc) …