Emergence of high quality sputtered III-nitride semiconductors and devices
This article provides an overview of recent development of sputtering method for high-quality
III-nitride semiconductor materials and devices. Being a mature deposition technique widely …
III-nitride semiconductor materials and devices. Being a mature deposition technique widely …
Highly elongated vertical GaN nanorod arrays on Si substrates with an AlN seed layer by pulsed-mode metal–organic vapor deposition
To extend the availability of nanostructure-based optoelectronic applications, vertically
elongated nanorods with precisely controlled morphology are required. For group III nitrides …
elongated nanorods with precisely controlled morphology are required. For group III nitrides …
Semipolar AlN and GaN on Si (100): HVPE technology and layer properties
V Bessolov, A Kalmykov, E Konenkova… - Journal of Crystal …, 2017 - Elsevier
Hydride vapor phase epitaxy (HVPE) growth of semipolar AlN and GaN layers on planar Si
(100) substrates with SiC nanolayer is investigated. It is shown experimentally that the solid …
(100) substrates with SiC nanolayer is investigated. It is shown experimentally that the solid …
How to obtain metal-polar untwinned high-quality (1 0− 1 3) GaN on m-plane sapphire
Directional sputtering of Al and AlN on (1 0− 1 0) sapphire was used to obtain metal-polar (1
0− 1 3) templates. After overgrowth with AlN and GaN using metal-organic vapor phase …
0− 1 3) templates. After overgrowth with AlN and GaN using metal-organic vapor phase …
[HTML][HTML] Defect characterization of {101¯ 3} GaN by electron microscopy
Advances in obtaining untwinned (10 1 3)-oriented semi-polar GaN enable a new crystal
orientation for the growth of green and red LED structures. We present a scanning electron …
orientation for the growth of green and red LED structures. We present a scanning electron …
Improved crystal quality of semipolar (101¯ 3) GaN on Si (001) substrates using AlN/GaN superlattice interlayer
The planar epitaxial growth of semipolar (10 1¯ 3) GaN on a Si (001) substrate was
performed on a directionally sputtered AlN buffer layer. Three types of interlayers, ie, single …
performed on a directionally sputtered AlN buffer layer. Three types of interlayers, ie, single …
Orientation-controlled epitaxial lateral overgrowth of semipolar GaN on Si (001) with a directionally sputtered AlN buffer layer
We successfully grew semipolar (10 1 ̅ 3) and (10 1 ̅ 5) GaN films on Si (001) substrates
employing metal-organic chemical vapor deposition (MOCVD) by inserting a directionally …
employing metal-organic chemical vapor deposition (MOCVD) by inserting a directionally …
Epitaxial growth of bulk semipolar AlN films on Si (001) and Hybrid SiC/Si (001) Substrates
SA Kukushkin, AV Osipov, AV Redkov… - Technical Physics …, 2020 - Springer
The possibility of growing bulk (more than 7 μm thick) epitaxial semipolar AlN films on Si
(001) and hybrid SiC/Si (001) substrates without cracks has been investigated. It is found …
(001) and hybrid SiC/Si (001) substrates without cracks has been investigated. It is found …
Controlling the orientations of directional sputtered non-and semi-polar GaN/AlN layers
HU Nan, DV Dinh, M Pristovsek… - Japanese Journal of …, 2019 - iopscience.iop.org
We have studied the impact on the surface orientation of different sputtered Al layers
followed by AlN layers sputtered on m-plane sapphire. These initial layers were then …
followed by AlN layers sputtered on m-plane sapphire. These initial layers were then …
Recent progress in nonpolar and semi-polar GaN light emitters on patterned Si substrates
K Ding, V Avrutin, N Izyumskaya… - … and Devices XIII, 2018 - spiedigitallibrary.org
Growth of nonpolar and semi-polar GaN and GaN-based structures offers the opportunity to
reduce quantum confined Stark effect and possibly increase indium incorporation, as …
reduce quantum confined Stark effect and possibly increase indium incorporation, as …