Size-dependent magnetic tuning of lateral photovoltaic effect in nonmagnetic Si-based Schottky junctions

P Zhou, Z Gan, X Huang, C Mei, Y Xia, H Wang - Scientific reports, 2017 - nature.com
In this article, we report a magnetic tuning lateral photovoltaic effect (LPE) in a nonmagnetic
Si-based Schottky junctions. In the magnetic field intensity range of 0 to 1.6 T, the variation …

Role of the resistive layer on the performances of 2D a-Si: H thin film position sensitive detectors

R Martins, E Fortunato - Thin Solid Films, 1999 - Elsevier
The aim of this work is to present an analytical model which can to interpret the role of the
collecting resistive layer on the static performances exhibited by 2D amorphous silicon …

Large near-infrared lateral photovoltaic effect of ITO/Si structure observed at low temperature

S Qiao, J Liu, Y Liu, G Yan, S Wang… - IEEE transactions on …, 2016 - ieeexplore.ieee.org
In this paper, the power-and wavelength-dependent lateral photovoltaic effect (LPE) in an
indium tin oxide/Si structure is first studied at different temperatures ranging from 292 to 80 …

Amorphous silicon position sensitive detector array for fast 3-D object profiling

J Contreras, M Idzikowski, S Pereira… - IEEE Sensors …, 2011 - ieeexplore.ieee.org
A 32/128 linear array of 1-D amorphous silicon position sensitive detectors (PSD) was
integrated into a self constructed suitable and portable data acquisition prototype system …

Role of the collecting resistive layer on the static characteristics of a 1D a‐Si:H thin film position sensitive detector

E Fortunato, R Martins - Review of scientific instruments, 1996 - pubs.aip.org
The aim of this work is to present an analytical model able to interpret the role of the thin
collecting resistive layer on the static performances exhibited by 1D amorphous silicon …

Wavelength response of thin-film optical position-sensitive detectors

J Henry, J Livingstone - Journal of Optics A: Pure and Applied …, 2002 - iopscience.iop.org
Three different structures of thin-film optical position-sensitive detectors based on novel
hydrogenated amorphous silicon Schottky barrier (SB) structures have been studied under …

Sputtered a-Si: H thin-film position sensitive detectors

J Henry, J Livingstone - Journal of Physics D: Applied Physics, 2001 - iopscience.iop.org
This paper reports on three different position sensitive detector (PSD) structures based on rf
sputter deposited amorphous silicon. Most of the work reported by other researchers on thin …

Bias voltage-modulated lateral photovoltaic effect in indium tin oxide (ITO)/Si (n) structure

Y Liu, J Liu, S Qiao, S Wang, G Fu - Materials letters, 2015 - Elsevier
In this letter, a significant lateral photovoltaic effect (LPE) was found in ITO/Si (n) structure.
Moreover, with an external transverse bias voltage, the LPE improves dramatically. Our …

Development of solar cell for large area position detection: proof of concept

H Abdelmoneim, A Zekry, A Shaker - Heliyon, 2021 - cell.com
Detecting and analyzing a moving body position are helpful in many fields, such as
medicine, sports performance, virtual reality and many more. Therefore, researchers try to …

New ultra-light flexible large area thin film position sensitive detector based on amorphous silicon

E Fortunato, I Ferreira, F Giuliani… - Journal of Non …, 2000 - Elsevier
In this paper we report on large area one dimensional (1D) amorphous silicon position
sensors deposited on flexible polymer foil substrate. The pin sensor structure was deposited …