Display technology has developed rapidly in recent years, with III–V system-based micro-
light-emitting diodes (μLEDs) attracting attention as a means to overcome the physical …

Increasing InN content in InxGa1-xN compound is paramount for optoelectronic applications,
and has been demonstrated in homogeneous nanowires or deliberately grown nanowire …

In this study, we present the selective area plasma-assisted molecular beam epitaxial
growth of GaP-based nanoheterostructures (nanostubs), incorporating direct bandgap …

Due to the simple structure, single-contact light-emitting diode (SC-LED) holds promise for
applications in ultrahigh resolution micro-displays. However, the required alternating current …

100-nm-thick hexagonal fully and partially crystallized sapphire nanomembrane arrays were
demonstrated as growth templates for hexagonal micro-sized GaN arrays for micro-light …

III-nitride materials are of great importance in the development of modern optoelectronics,
but they have been limited over years by low light utilization rate and high dislocation …

As one of the most promising candidates for signal carrier sources in visible light
communication, GaN-based green micro-light emitting diodes (μ-LEDs) exhibit a limited …

The twentieth-century semiconductor revolution began with “man-made crystals,” or pn
junction-based heterostructures. This was the most significant step in the creation of light …

A method of performing atomic layer annealing (ALA) with radio-frequency (RF) substrate
bias on insulating and amorphous substrates is demonstrated for GaN deposition at 275° C …

Pursuing efficient long-wavelength InGaN LED has been a troublesome issue to be solved,
which forms interesting subjects for fundamental research, but finds also motivation in …