HfO2-based ferroelectric thin films are promising in both memory and logic devices owing to
their compatibility with complementary metal-oxide-semiconductor platforms and excellent …

The rapid progress of the internet of things, cloud computing, and artificial intelligence has
increased demand for high-performance computing. This demand has led to a focused …

This paper presents the area-selective wet etching (ASWE) method as a novel approach to
have a selective patterning of a 6.8 nm-thick zirconium-doped hafnium oxide (HZO) thin film …

Ferroelectricity has a wide range of applications in functional electronics, and it is extremely
important for the development of the next generation of information-storage technologies …

In ferroelectric and multiferroic-based devices, it is often necessary to grow thicker films for
enhanced properties. For certain phases that rely on substrate strain for growth, such thicker …

Laminated HfO 2-based ferroelectric thin films (FE-HfO 2) have offered unexpected
opportunities to implement the high-density ferroelectric memory and on chip piezoelectric …

A negative capacitance (NC) effect has been proposed as a critical pathway to overcome
the'Boltzmann tyranny'of electrons, achieve the steep slope operation of transistors and …

Hafnium oxide films were deposited on sapphire and silicon (100) substrates using the DC
reactive magnetron sputtering technique from a pure hafnium target at different discharge …

Ferroelectric materials with multi-directional polarization orders can form a variety of special
domain structures, which have a wide range of applications. In this work, lead-free …

Along with the gradually expanding scope of material research, more and more 5d
electronic-related materials are entering our vision. Particularly, the variation of the radial …