Heusler alloys are theoretically predicted to become half-metals at room temperature (RT).
The advantages of using these alloys are good lattice matching with major substrates, high …

The incessant demand for higher density, faster access time and lower power consuming
memory devices such as random access memories have driven tremendous research and …

Despite significant technological advances in miniaturization and operational speed,
modern electronic devices suffer from unescapably increasing rates of Joule heating and …

Heusler alloys have been theoretically predicted and experimentally demonstrated to be an
ideal spin source due to their half-metallicity at room temperature. The half-metallicity also …

Heusler compounds are a large group of intermetallic compounds with over 1000 members
with similar crystal structures having a vast array of tunable properties. These properties …

In the recent decade, the family of Heusler compounds has attracted tremendous scientific
and technological interest in the field of spintronics. This is essentially due to their …

Spin polarization and magnetic anisotropy are key properties that determine the
performance of magnetic tunnel junctions (MTJs), which are utilized in various spintronic …

Zhenchao Wen*, Hiroaki Sukegawa, Takao Furubayashi, Jungwoo Koo, Koichiro Inomata,
Seiji Mitani, Jason Paul Hadorn, Tadakatsu Ohkubo, and Kazuhiro Hono were demonstrated …

Perpendicular magnetic anisotropy (PMA) in ultrathin magnetic structures is a key ingredient
for the development of electrically controlled spintronic devices. Due to their relatively large …

We demonstrate electrical spin injection and detection in n-type Ge (n-Ge) at room
temperature using four-terminal nonlocal spin-valve and Hanle-effect measurements in …