[HTML][HTML] Current-driven writing process in antiferromagnetic Mn2Au for memory applications

S Reimers, Y Lytvynenko, YR Niu, E Golias… - Nature …, 2023 - nature.com
Current pulse driven Néel vector rotation in metallic antiferromagnets is one of the most
promising concepts in antiferromagnetic spintronics. We show microscopically that the Néel …

Quenching of an antiferromagnet into high resistivity states using electrical or ultrashort optical pulses

Z Kašpar, M Surýnek, J Zubáč, F Krizek, V Novák… - Nature …, 2021 - nature.com
Antiferromagnets are of potential use in the development of spintronic devices due to their
ultrafast dynamics, insensitivity to external magnetic fields and absence of magnetic stray …

Noninvasive measurements of spin transport properties of an antiferromagnetic insulator

H Wang, S Zhang, NJ McLaughlin, B Flebus… - Science …, 2022 - science.org
Antiferromagnetic insulators (AFIs) are of substantial interest because of their potential in the
development of next-generation spintronic devices. One major effort in this emerging field is …

[HTML][HTML] Chiral logic computing with twisted antiferromagnetic magnon modes

C Jia, M Chen, AF Schäffer, J Berakdar - npj Computational Materials, 2021 - nature.com
Antiferromagnetic (AFM) materials offer an exciting platform for ultrafast information handling
with low cross-talks and compatibility with existing technology. Particularly interesting for low …

[HTML][HTML] Field-induced metal-to-insulator transition and colossal anisotropic magnetoresistance in a nearly Dirac material EuMnSb2

ZL Sun, AF Wang, HM Mu, HH Wang, ZF Wang… - npj Quantum …, 2021 - nature.com
Realizing applicably appreciated spintronic functionalities basing on the coupling between
charge and spin degrees of freedom is still a challenge. For example, the anisotropic …

Anomalous Hall effect, robust negative magnetoresistance, and memory devices based on a noncollinear antiferromagnetic metal

P Qin, Z Feng, X Zhou, H Guo, J Wang, H Yan… - ACS …, 2020 - ACS Publications
We report the successful fabrication of noncollinear antiferromagnetic D 019 Mn3Ge thin
films on insulating oxide substrates. The anomalous Hall effect and the large parallel …

Controlling the deformation of antiferromagnetic skyrmions in the high-velocity regime

A Salimath, F Zhuo, R Tomasello, G Finocchio… - Physical Review B, 2020 - APS
While antiferromagnetic skyrmions display appealing properties, their lateral expansion in
the high-velocity regime hinders their potential for applications. In this work, we study the …

Integration of the noncollinear antiferromagnetic metal Mn3Sn onto ferroelectric oxides for electric-field control

X Wang, Z Feng, P Qin, H Yan, X Zhou, H Guo, Z Leng… - Acta Materialia, 2019 - Elsevier
Noncollinear antiferromagnetic materials have received dramatically increasing attention in
the field of spintronics as their exotic topological features such as the Berry-curvature …

[HTML][HTML] Current-induced Néel order switching facilitated by magnetic phase transition

H Wu, H Zhang, B Wang, F Groß, CY Yang, G Li… - Nature …, 2022 - nature.com
Terahertz (THz) spin dynamics and vanishing stray field make antiferromagnetic (AFM)
materials the most promising candidate for the next-generation magnetic memory …

Valleytronics Candidate with Spontaneous Valley Polarization in A-Type Antiferromagnetic MoSi2N4/MnPS3 Heterostructure

X Dong, K Jia, W Ji, S Li, CW Zhang - ACS Applied Electronic …, 2023 - ACS Publications
Two-dimensional (2D) antiferromagnetic (AFM) heterostructures (HTSs) have broad
application prospects since they offer a stray-free field, robustness against magnetic …