Memristor-based neural networks: a bridge from device to artificial intelligence

Z Cao, B Sun, G Zhou, S Mao, S Zhu, J Zhang… - Nanoscale …, 2023 - pubs.rsc.org
Since the beginning of the 21st century, there is no doubt that the importance of artificial
intelligence has been highlighted in many fields, among which the memristor-based artificial …

Extendable piezo/ferroelectricity in nonstoichiometric 2D transition metal dichalcogenides

Y Hu, L Rogée, W Wang, L Zhuang, F Shi… - Nature …, 2023 - nature.com
Engineering piezo/ferroelectricity in two-dimensional materials holds significant implications
for advancing the manufacture of state-of-the-art multifunctional materials. The inborn …

Robust multiferroic in interfacial modulation synthesized wafer-scale one-unit-cell of chromium sulfide

L Song, Y Zhao, B Xu, R Du, H Li, W Feng… - Nature …, 2024 - nature.com
Multiferroic materials offer a promising avenue for manipulating digital information by
leveraging the cross-coupling between ferroelectric and ferromagnetic orders. Despite the …

Recent advances in memristors based on two-dimensional ferroelectric materials

W Niu, G Ding, Z Jia, XQ Ma, JY Zhao, K Zhou… - Frontiers of …, 2024 - Springer
In this big data era, the explosive growth of information puts ultra-high demands on the data
storage/computing, such as high computing power, low energy consumption, and excellent …

Unconventional Polarization-Switching Mechanism in Ferroelectrics and Its Implications

Y Wu, Y Zhang, J Jiang, L Jiang, M Tang, Y Zhou… - Physical Review Letters, 2023 - APS
HfO 2-based ferroelectric thin films are promising for their application in ferroelectric devices.
Predicting the ultimate magnitude of polarization and understanding its switching …

Tuning ferroelectric phase transition temperature by enantiomer fraction

CC Fan, CD Liu, BD Liang, W Wang, ML Jin… - Nature …, 2024 - nature.com
Tuning phase transition temperature is one of the central issues in phase transition
materials. Herein, we report a case study of using enantiomer fraction engineering as a …

Ferroelectric domain wall memory and logic

J Sun, AQ Jiang, P Sharma - ACS Applied Electronic Materials, 2023 - ACS Publications
Powered by big data and artificial intelligence, data-centric innovations are bringing about
transformative societal changes and are expected to continue to meteorically rise for the …

Neuromorphic functionality of ferroelectric domain walls

P Sharma, J Seidel - Neuromorphic Computing and Engineering, 2023 - iopscience.iop.org
Mimicking and replicating the function of biological synapses with engineered materials is a
challenge for the 21st century. The field of neuromorphic computing has recently seen …

Erasable Domain Wall Current-Dominated Resistive Switching in BiFeO3 Devices with an Oxide–Metal Interface

D Chen, X Tan, B Shen, J Jiang - ACS Applied Materials & …, 2023 - ACS Publications
Electric transport in the charged domain wall (CDW) region has emerged as a promising
phenomenon for the development of next-generation ferro-resistive memory with ultrahigh …

Multiresistance states in ferro-and antiferroelectric trilayer boron nitride

M Lv, J Wang, M Tian, N Wan, W Tong, C Duan… - Nature …, 2024 - nature.com
Stacking two atomic layers together can induce interlayer (sliding) ferroelectricity that is
absent in their naturally occurring crystal forms. With the flexibility of two-dimensional …