[HTML][HTML] Recent Advances in Two-dimensional Graphitic Carbon Nitride based Photodetectors

X Zhang, M Li, W Han, SE Wu, H Wang, S Liu, Z Tang… - Materials & Design, 2023 - Elsevier
Graphitic carbon nitride (gC 3 N 4) is a kind of low cost and environment-friendly 2D polymer
semiconductor that exhibits a tunable band gap, high thermal stability, intriguing …

[HTML][HTML] Engineering graphitic carbon nitride for next-generation photodetectors: a mini review

Y Li, H Du - RSC advances, 2023 - pubs.rsc.org
Semiconductor photodetectors, as photoelectric devices using optical–electrical signal
conversion for detection, are widely used in various fields such as optical communication …

Bionic visual-audio photodetectors with in-sensor perception and preprocessing

J Fu, C Nie, F Sun, G Li, H Shi, X Wei - Science Advances, 2024 - science.org
Serving as the “eyes” and “ears” of the Internet of Things, optical and acoustic sensors are
the fundamental components in hardware systems. Nowadays, mainstream hardware …

High-performance self-powered ultraviolet to near-infrared photodetector based on WS2/InSe van der Waals heterostructure

J Chen, Z Zhang, Y Ma, J Feng, X Xie, X Wang, A Jian… - Nano Research, 2023 - Springer
Abstract van der Waals heterostructures (vdWHs) based on two-dimensional (2D) materials
without the crystal lattice matching constraint have great potential for high-performance …

Dipole field-driven organic–inorganic heterojunction for highly sensitive ultraviolet photodetector

M Li, C Wu, M Chen, T Weng, X Yu, K Lin… - … Applied Materials & …, 2024 - ACS Publications
Developing high-performance organic–inorganic ultraviolet (UV) photodetectors (PDs) has
attracted considerable attention. However, this development has been hindered due to poor …

Sulfur-Doped g-C3N4/GaN nn Heterojunction for High Performance Low-Power Blue-Ultraviolet Photodetector with Ultra-High On/Off Ratio and Detectivity

W Song, J Wei, J Lv, X Cao, Y Sun, S Li, X He - Carbon, 2024 - Elsevier
Polymeric graphitic carbon nitride (gC 3 N 4) shares a structural similarity to graphene, yet it
possesses a distinctive electronic band structure, rendering it promising for photoelectric …

[HTML][HTML] Wide Bandgap Semiconductors for Ultraviolet Photodetectors: Approaches, Applications, and Prospects

F Cao, Y Liu, M Liu, Z Han, X Xu, Q Fan, B Sun - Research, 2024 - spj.science.org
Ultraviolet (UV) light, invisible to the human eye, possesses both benefits and risks. To
harness its potential, UV photodetectors (PDs) have been engineered. These devices can …

In-situ fabrication of on-chip 1T'-MoTe2/Ge Schottky junction photodetector for self-powered broadband infrared imaging and position sensing

M Zhu, K Liu, D Wu, Y Jiang, X Li, P Lin, Z Shi, X Li… - Nano Research, 2024 - Springer
High-sensitivity room-temperature multi-dimensional infrared (IR) detection is crucial for
military and civilian purposes. Recently, the gapless electronic structures and unique …

Boosting lateral photosensing performances in a P (VDF-TrFE)/Bi 2 Se 3/Si heterojunction induced by surface modification and ferroelectric and pyroelectric effects

Q Wang, G Zhang, T Zhang, S Guo, J Liu… - Journal of Materials …, 2024 - pubs.rsc.org
Bi2Se3 exhibits not only high carrier mobility but also exceptional thermal stability and
robustness, making it an ideal material for ultrafast detection and switching applications in …

[HTML][HTML] Fast and broadband spatial-photoresistance modulation in graphene–silicon heterojunctions

R Du, W Wang, H Lin, X Zhang, H Wu, B Zhu, X Jing… - …, 2024 - degruyter.com
Different types of devices with modulable resistance are attractive for the significant potential
applications such as sensors, information storage, computation, etc. Although extensive …