Extensive literature and publications on intermediate band solar cells (IBSCs) are reviewed.
A detailed discussion is given on the thermodynamics of solar energy conversion in IBSCs …

Nanometre-scale semiconductor devices have been envisioned as next-generation
technologies with high integration and functionality. Quantum dots, or the so-called'artificial …

III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation
technology with good functionality, superior performance, high integration ability and low …

Quantum dot solar cells, as a promising candidate for the next generation solar cell
technology, have received tremendous attention in the last 10 years. Some recent …

The ability to grow defect-free nanowires in lattice-mismatched material systems and to
design their properties has made them ideal candidates for applications in fields as diverse …

While III–V binary nanowires are now well controlled and their growth mechanisms
reasonably well understood, growing ternary nanowires, including controlling their …

Quantum dot intermediate band solar cell (QD-IBSC) has high efficiency theoretically. It can
absorb photons with energy lower than the bandgap of the semiconductor through the half …

One of the primary challenges facing quantum dot (QD)-based intermediate band solar cells
is the short lifetime of charge carriers (~ 1 ns). To investigate this, InAs QD/GaAs 1-x Sb x …

Self-assembled InAs quantum dots (QD) in a GaAs 1− x Sb x matrix are studied using
photoluminescence. Increasing the Sb composition in the GaAs 1− x Sb x matrix reduces the …

Multiphoton transitions in GaSb/GaAs quantum-dot intermediate-band solar cells are
investigated at variable temperature and excitation intensity. A transition temperature is …