Science, engineering, and medicine ultimately demand fast information processing with ultra-
low power consumption. The recently developed spin-orbit torque (SOT)-induced …

Electrical‐current‐induced magnetization switching is a keystone concept in the
development of spintronics devices. In the last few years, this field has experienced a …

All-electrical and programmable manipulations of ferromagnetic bits are highly pursued for
the aim of high integration and low energy consumption in modern information technology …

The emerging wide varieties of the van der Waals (vdW) magnets with atomically thin and
smooth interfaces hold great promise for next‐generation spintronic devices. However, due …

Current‐induced magnetization switching by spin–orbit torque (SOT) holds considerable
promise for next generation ultralow‐power memory and logic applications. In most cases …

We report the observation of magnetoresistance originating from Rashba spin-orbit coupling
(SOC) in a metallic heterostructure: the Rashba-Edelstein (RE) magnetoresistance. We …

The magnitude of spin-orbit torque (SOT), exerted to a ferromagnet (FM) from an adjacent
heavy metal (HM), strongly depends on the amount of spin current absorbed in the FM. We …

We describe a spin logic device with controllable magnetization switching of perpendicularly
magnetized ferromagnet/heavy metal structures on a ferroelectric (1-)[Pb (Mg 1/3 Nb 2/3) O …

Electrical current–induced deterministic magnetization switching in a magnetic multilayer
structure without any external magnetic field is realized by utilizing interlayer exchange …

Antiferromagnets are outstanding candidates for the next generation of spintronic
applications, with great potential for downscaling and decreasing power consumption …