A strategy for a microbolometer operating over a wide range of temperatures up to 100° C
with low nonlinearity and without hysteresis is described, based on a thermally stable VO 2 …

This work reports on the modification of electrical properties of amorphous vanadium oxide
(a-VO x) thin film thermistor by growth temperature and its effects on the performances of a …

The temperature dependence of current is investigated experimentally for silicon–
germanium (Si-Ge) multi-quantum-well pin devices on Si substrates as uncooled bolometer …

Silicon integrated circuits (IC) in conjunction with the micro-machining technology for thin
films, have opened new ways for the development of low cost and reliable night vision …

Vanadium oxide (VO x) and hydrogenated silicon germanium (Si x Ge 1-x) are the two
predominant thin film material systems used as the active layer in resistive infrared imaging …

In this paper, the deposition and the electrical characterization of hydrogenated amorphous
silicon germanium (a-SixGey: H) thin films were performed by plasma enhanced chemical …

Uncooled microbolometers are infrared detectors used for imaging applications in the long-
wave IR spectra, made of semiconductor materials, such as vanadium oxide (VOx), boron …