Wide-temperature (up to 100° C) operation of thermostable vanadium oxide based microbolometers with Ti/MgF2 infrared absorbing layer for long wavelength infrared …
A strategy for a microbolometer operating over a wide range of temperatures up to 100° C
with low nonlinearity and without hysteresis is described, based on a thermally stable VO 2 …
with low nonlinearity and without hysteresis is described, based on a thermally stable VO 2 …
Modification of electrical properties of amorphous vanadium oxide (a-VOx) thin film thermistor for microbolometer
This work reports on the modification of electrical properties of amorphous vanadium oxide
(a-VO x) thin film thermistor by growth temperature and its effects on the performances of a …
(a-VO x) thin film thermistor by growth temperature and its effects on the performances of a …
Ge/SiGe quantum well pin structures for uncooled infrared bolometers
FB Atar, A Yesilyurt, MC Onbasli… - IEEE electron device …, 2011 - ieeexplore.ieee.org
The temperature dependence of current is investigated experimentally for silicon–
germanium (Si-Ge) multi-quantum-well pin devices on Si substrates as uncooled bolometer …
germanium (Si-Ge) multi-quantum-well pin devices on Si substrates as uncooled bolometer …
Un-Cooled microbolometers with amorphous germanium-silicon (a-GexSiy: H) thermo-sensing films
M Moreno, A Torres, R Ambrosio, A Kosarev - Bolometers, 2012 - books.google.com
Silicon integrated circuits (IC) in conjunction with the micro-machining technology for thin
films, have opened new ways for the development of low cost and reliable night vision …
films, have opened new ways for the development of low cost and reliable night vision …
Evaluation of 1/f noise in prospective IR imaging thin films
HA Basantani, DB Saint John… - … and Applications XL, 2014 - spiedigitallibrary.org
Vanadium oxide (VO x) and hydrogenated silicon germanium (Si x Ge 1-x) are the two
predominant thin film material systems used as the active layer in resistive infrared imaging …
predominant thin film material systems used as the active layer in resistive infrared imaging …
The Electrical Characterization of Hydrogenated Amorphous Silicon Germanium Film Used in Un-Cooled Micro-Bolometer
ZQ Chen, H Yong, Z Fang, XC Phan… - Materials Science …, 2018 - Trans Tech Publ
In this paper, the deposition and the electrical characterization of hydrogenated amorphous
silicon germanium (a-SixGey: H) thin films were performed by plasma enhanced chemical …
silicon germanium (a-SixGey: H) thin films were performed by plasma enhanced chemical …
Optimization of the electrical conductivity and thermal coefficient of temperature (TCR) on hydrogenated amorphous silicon-germanium films doped with nitrogen (a …
O Velandia, M Moreno, R Zavala… - 2023 IEEE Latin …, 2023 - ieeexplore.ieee.org
Uncooled microbolometers are infrared detectors used for imaging applications in the long-
wave IR spectra, made of semiconductor materials, such as vanadium oxide (VOx), boron …
wave IR spectra, made of semiconductor materials, such as vanadium oxide (VOx), boron …